SMD Type Product specification NDS332P General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. -1 A, -20 V, RDS(ON) = 0.41 Ω @ VGS= -2.7 V RDS(ON) = 0.3 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface Mount package. ________________________________________________________________________________ D S G Asolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage T A = 25°C unless otherwise noted VGSS Gate-Source Voltage - Continuous ID Drain Current - Continuous PD Maximum Power Dissipation (Note 1a) - Pulsed Units -20 V ±8 V -1 A -10 (Note 1a) (Note 1b) TJ,TSTG NDS332P Operating and Storage Temperature Range 0.5 W 0.46 -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJC Thermal Resistance, Junction-to-Case (Note 1) http://www.twtysemi.com [email protected] 250 °C/W 75 °C/W 4008-318-123 1 of 3 SMD Type Product specification NDS332P Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min -20 Typ Max Units -1 µA -10 µA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V V TJ = 55°C IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V -100 nA -1 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance VGS = -2.7 V, ID = -1 A TJ =125°C -0.4 -0.6 -0.3 -0.45 -0.8 0.35 0.41 0.5 0.74 0.26 0.3 TJ =125°C VGS = -4.5 V, ID = -1.1 A ID(ON) gFS On-State Drain Current Forward Transconductance VGS = -2.7 V, VDS = -5 V -1.5 VGS = -4.5 V, VDS = -5 V -2.5 Ω A VDS = -5 V, ID= -1 A 2.2 S VDS = -10 V, VGS = 0 V, f = 1.0 MHz 195 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 105 pF 40 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge http://www.twtysemi.com VDD = -6 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω VDS = -5 V, ID = -1 A, VGS = -4.5 V [email protected] 8 15 ns 30 45 ns 25 45 ns 27 45 ns 3.7 5 nC 0.5 nC 0.9 nC 4008-318-123 2 of 3 SMD Type Product specification NDS332P Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units -0.42 A -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Source Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) -0.75 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD (t) = T J −T A R θJA (t) = T J −T A R θJC +R θCA (t) = I 2D(t) × R DS(ON)@T J Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 250oC/W when mounted on a 0.02 in2 pad of 2oz copper. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz copper. 1a 1b Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3