SMD Type Product specification FDN340P General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. –2 A, 20 V. RDS(ON) = 0.07 Ω @ V GS = –4.5 V RDS(ON) = 0.11 Ω @ V GS = –2.5 V. RDS(ON) = 0.210 Ω @ V GS = –1.8 V. • Low gate charge (8nC typical). These devices are well suited for portable electronics applications: Load switching and power management, battery charging circuits, and DC/DC conversion. • High performance trench technology for extremely low RDS(ON) . • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. D 34 D 0 S TM SuperSOT -3 G G Absolute Maximum Ratings Symbol T A=25oC unless otherwise noted Parameter V DSS Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed TJ , TSTG Ratings Units –20 V ±8 V –2 A –10 Power Dissipation for Single Operation PD S (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W -55 to +150 °C 250 °C/W 75 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 340 FDN340P 7’’ 8mm 3000 units http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification FDN340P Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –15 mV/°C Off Characteristics V GS = 0 V, ID = –250 µA BV DSS ∆BV DSS ∆TJ Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V V DS = 0 V –100 nA –1.5 V On Characteristics V GS(th) ∆V GS(th) ∆TJ RDS(on) –20 V ID = –250 µA,Referenced to 25°C V DS = –16 V, V GS = 0 V TJ =55°C –1 µA –10 (Note 2) V DS = V GS , ID = –250 µA ID = –250 µA,Referenced to 25°C Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance –0.4 –0.9 2.7 mV/°C V GS = –4.5 V, ID = –2 A 0.052 0.07 0.075 0.12 V GS = –2.5 V, TJ =125°C ID = –1.7A, 0.078 0.11 V GS = –1.8 V, ID = –1.2 A, Ω 0.21 ID(on) On–State Drain Current V GS = –4.5 V, V DS = –5 V gFS Forward Transconductance V DS = –4.5 V, ID = –2 A –5 8 A S V DS = –10 V, f = 1.0 MHz V GS = 0 V, 600 pF 175 pF 80 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 6 12 ns 9 18 ns Turn–Off Delay Time 31 50 ns tf Turn–Off Fall Time 26 42 ns Qg Total Gate Charge 8 11 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DD = –5 V, V GS = –4.5 V, V DS = –10V, V GS = –4.5 V ID = –0.5 A, RGEN = 6 Ω ID = –2 A, 1.3 nC 2.2 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –0.42 A Voltage (Note ) –0.7 –0.42 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while Rθ CA is determined by the user's board design. a. 250°C/W when mounted on a 0.02in2 pad of 2 oz copper b. 270°C/W when mounted on a .001 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% http://www.twtysemi.com [email protected] 4008-318-123 2 of 2