SMD Type Product specification FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge • Load switch • Fast switching speed • Battery protection • Power management RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • High performance trench technology for extremely low RDS(ON) D D S SOT-23 Absolute Maximum Ratings Symbol S G G TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current 0.9 A – Continuous – Pulsed 2 PD Maximum Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range 0.35 W –55 to +150 °C 357 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 305 FDV305N 7’’ 8mm 3000 units http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification FDV305N Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA 20 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA 1.5 V VGS = 0 V, ID = 250 µA,Referenced to 25°C 15 mV/°C On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance 0.6 1 –3 164 235 220 mV/°C 220 300 303 ID(on) On–State Drain Current VGS = 4.5 V, ID = 0.9 A ID = 0.7 A VGS = 2.5 V, VGS = 4.5V, ID = 0.9 A, TJ = 125°C VGS = 4.5V, VDS = 5 V gFS Forward Transconductance VDS = 5V, ID = 0.9 A 3 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 109 pF 30 pF 14 pF 1 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 0.9 A, 4.5 9 ns 7 14 ns 8 16 ns 1.4 2.8 ns 1.1 1.5 nC 0.26 nC 0.26 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IF = 0.9 A, diF/dt = 100 A/µs IS = 0.29 A 0.75 0.29 A 1.2 V 7.4 nS 2.2 nC Notes: 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com [email protected] 4008-318-123 2of 2