TYSEMI NDS356AP

SMD Type
Product specification
NDS356AP
General Description
Features
TM
SuperSOT -3
P-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications such as notebook computer power management,
portable electronics, and other battery powered circuits where
fast high-side switching, and low in-line power loss
are
needed in a very small outline surface mount package.
-1.1 A, -30 V, RDS(ON) = 0.3 Ω @ VGS=-4.5 V
RDS(ON) = 0.2 Ω @ VGS=-10 V.
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOTTM-3 design for superior
thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
________________________________________________________________________________
D
S
G
Absolute Maximum Ratings
Symbol
Parameter
VDSS
T A = 25°C unless otherwise noted
NDS356AP
Units
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Maximum Drain Current - Continuous
±1.1
A
(Note 1a)
- Pulsed
PD
TJ,TSTG
Maximum Power Dissipation
±10
(Note 1a)
0.5
(Note 1b)
0.46
Operating and Storage Temperature Range
W
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 3
SMD Type
Product specification
NDS356AP
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
-30
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
V
IDSS
Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
IGSSR
Gate - Body Leakage, Reverse
VGS = -20V, VDS = 0 V
-100
nA
-1.6
-2.5
V
TJ =55°C
-1
µA
-10
µA
100
nA
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = -4.5 V, ID = -1.1 A
-0.8
TJ =125°C
-0.5
TJ =125°C
VGS = -10 V, ID = -1.3 A
-1.3
-2.2
0.25
0.3
0.35
0.4
0.14
0.2
-3
Ω
ID(ON)
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
A
gFS
Forward Transconductance
VDS = -5 V, ID = -1.1 A
2
S
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
280
pF
170
pF
65
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
8
15
ns
17
30
ns
Turn - Off Delay Time
53
90
ns
Turn - Off Fall Time
38
80
ns
3.4
4.4
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
tf
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
http://www.twtysemi.com
VDD = -10 V, ID = -1 A,
VGS = -10 V, RGEN = 50 Ω
VDS = -10 V, ID = -1.1 A,
VGS = -5 V
[email protected]
nC
0.7
nC
1.5
nC
4008-318-123
2 of 3
SMD Type
Product specification
NDS356AP
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
-0.42
A
-10
A
-1.2
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Source Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.42 (Note 2)
-0.8
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD (t) =
T J −T A
R θJA(t)
=
T J −T A
R θJC +R θCA (t)
= I 2D(t) × R DS(ON)@T J
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
o
2
a. 250 C/W when mounted on a 0.02 in pad of 2oz copper.
o
2
b. 270 C/W when mounted on a 0.001 in pad of 2oz copper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 3