SMD Type Product specification NDF0610 / NDS0610 General Description Features -0.18 and -0.12A, -60V. RDS(ON) = 10Ω These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) TO-92 and SOT-23 packages for both through hole and surface mount applications High saturation current ____________________________________________________________________________________________ S D G S D G S SOT-23 NDS0610 G TO-92 D NDF0610 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDF0610 NDS0610 Units VDSS Drain-Source Voltage -60 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) -60 V VGSS Gate-Source Voltage - Continuous ±20 V ±30 V - Nonrepetitive (tP < 50 µs) ID Drain Current - Continuous -0.18 - Pulsed PD -0.12 A -1 Maximum Power Dissipation TA = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds 0.8 0.36 W 5 2.9 mW/oC -55 to 150 °C 300 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient http://www.twtysemi.com [email protected] 200 350 4008-318-123 °C/W 1 of 2 SMD Type Product specification NDF0610 / NDS0610 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min -60 Typ Max Units -1 µA -200 µA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -10 µA IDSS Zero Gate Voltage Drain Current VDS = -48 V, VGS = 0 V V TJ = 125°C IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -10 nA V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA TJ = 125°C RDS(ON) Static Drain-Source On-Resistance -1 -2.4 -3.5 -0.6 -2.1 -3.2 3.6 10 5.9 16 5.2 20 7.9 30 VGS = -10 V, ID = -0.5 A TJ = 125°C VGS = -4.5 V, ID = -0.25 A TJ = 125°C ID(on) On-State Drain Current VGS = -10 V, VDS = -10 V -0.6 VGS = -4.5 V, VDS = -10 V gFS Forward Transconductance -1.6 Ω A -0.35 VDS = -10 V, ID = -0.1 A 70 170 mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz 40 60 pF 11 25 pF 3.2 5 pF SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) VDD = -25 V, ID = -0.18 A, VGS = -10 V, RGEN = 25 Ω 7 10 nS 5 15 nS Turn - Off Delay Time 13 15 nS tf Turn - Off Fall Time 10 20 nS Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -48 V, ID = -0.5 A, VGS = -10 V 1.43 nC 0.6 nC 0.25 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuous Source Current ISM Maximum Pulse Source Current (Note 1) VSD Drain-Source Diode Forward Voltage trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IS = -0.5 A (Note 1) VGS = 0 V, IS = -0.5 A, dIF/dt = 100 A/µs TJ = 125°C -0.18 A -1 A -1.2 -1.5 V -0.98 -1.3 40 ns 2.8 A Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2