Product specification PMV40UN TrenchMOS™ ultra low level FET Rev. 01 — 05 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV40UN in SOT23. 1.2 Features ■ Ultra low level threshold ■ Surface mount package. 1.3 Applications ■ Battery management ■ High-speed switch. 1.4 Quick reference data ■ VDS ≤ 30 V ■ Ptot ≤ 1.9 W ■ ID ≤ 4.9 A ■ RDSon ≤ 47 mΩ. 2. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) Simplified outline Symbol d 3 g 1 2 MBB076 Top view s MSB003 SOT23 http://www.twtysemi.com [email protected] 1 of 3 Product specification PMV40UN TrenchMOS™ ultra low level FET 3. Ordering information Table 2: Ordering information Type number PMV40UN Package Name Description Version - plastic surface mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 30 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage (DC) - ±8 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 - 4.9 A Tsp = 100 °C; VGS = 4.5 V; Figure 2 - 3.1 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 19.6 A Ptot total power dissipation Tsp = 25 °C; Figure 1 - 1.9 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C - 1.6 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 6.4 A http://www.twtysemi.com [email protected] 2 of 3 Product specification PMV40UN TrenchMOS™ ultra low level FET 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 250 µA; VGS = 0 V Tj = 25 °C 30 - - V Tj = −55 °C 27 - - V ID = 1 mA; VDS = VGS; Figure 9 V Tj = 25 °C 0.45 0.7 - V Tj = 150 °C 0.25 0.4 - V Tj = 25 °C - - 1 µA Tj = 150 °C - - 100 µA - 10 100 nA Tj = 25 °C - 40 47 mΩ Tj = 150 °C - 68 79.9 mΩ VDS = 30 V; VGS = 0 V IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 4.5 V; ID = 2 A; Figure 7 and 8 VGS = 2.5 V; ID = 1.5 A; Figure 7 and 8 - 45 53 mΩ VGS = 1.8 V; ID = 1 A; Figure 7 and 8 - 55 73 mΩ ID = 1 A; VDD = 15 V; VGS = 4.5 V; Figure 13 - 9.3 - nC - 0.7 - nC - 2.2 - nC VGS = 0 V; VDS = 30 V; f = 1 MHz; Figure 11 - 445 - pF - 65 - pF - 50 - pF VDD = 15 V; RL = 15 Ω; VGS = 4.5 V; RG = 6 Ω - 6 - ns - 12 - ns Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 38 - ns tf fall time - 12 - ns - 0.66 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 1.25 A; VGS = 0 V; Figure 12 http://www.twtysemi.com [email protected] 3 of 3