TYSEMI PMV30XN

Product specification
PMV30XN
20 V, 3.2 A N-channel Trench MOSFET
Rev. 1 — 22 June 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Low threshold voltage
 Trench MOSFET technology
 Very fast switching
1.3 Applications
 Relay driver
 Low-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
3.2
A
-
28
35
mΩ
[1]
VGS = 4.5 V; Tamb = 25 °C
Static characteristics
drain-source on-state
resistance
RDSon
[1]
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
SOT23 (TO-236AB)
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mbb076
S
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Product specification
PMV30XN
20 V, 3.2 A N-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
Package
PMV30XN
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMV30XN
NZ%
[1]
% = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Tj = 25 °C
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Min
Max
Unit
-
20
V
-12
12
V
VGS = 4.5 V; Tamb = 25 °C
[1]
-
3.2
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
2.1
A
-
12.8
A
[2]
-
380
mW
[1]
-
520
mW
-
1800
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
0.6
A
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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Product specification
PMV30XN
20 V, 3.2 A N-channel Trench MOSFET
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.5
1
1.5
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 20 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
IGSS
RDSon
gfs
gate leakage current
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
drain-source on-state
resistance
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
-
28
35
mΩ
VGS = 4.5 V; ID = 3.2 A; Tj = 150 °C
-
44
51
mΩ
VGS = 2.5 V; ID = 2.6 A; Tj = 25 °C
-
39
60
mΩ
forward
transconductance
VDS = 10 V; ID = 3 A; Tj = 25 °C
-
15
-
S
VDS = 15 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
-
4.9
7.4
nC
-
1.5
-
nC
-
2.9
-
nC
-
420
-
pF
-
125
-
pF
-
73
-
pF
-
11
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 15 V; VGS = 4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 3 A
tr
rise time
-
28
-
ns
td(off)
turn-off delay time
-
93
-
ns
tf
fall time
-
51
-
ns
-
0.67
1.2
V
Source-drain diode
VSD
source-drain voltage
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IS = 0.6 A; VGS = 0 V; Tj = 25 °C
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