TYSEMI BSH108

Product specification
BSH108
N-channel enhancement mode field-effect transistor
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSH108 in SOT23.
2. Features
■
■
■
■
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
3. Applications
c
c
■ Battery management
■ High speed switch
■ Low power DC to DC converter.
4. Pinning information
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
1
gate (g)
2
source (s)
3
drain (d)
Simplified outline
Symbol
3
d
g
1
2
Top view
MSB003
MBB076
s
SOT23
http://www.twtysemi.com
[email protected]
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Product specification
BSH108
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
VDS
drain-source voltage (DC)
Conditions
Typ
Max
Unit
Tj = 25 to 150 °C
−
30
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 5 V
−
1.9
A
Ptot
total power dissipation
Tsp = 25 °C
−
0.83
W
Tj
junction temperature
−
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 1 A
77
120
mΩ
VGS = 5 V; ID = 1 A
102
140
mΩ
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj = 25 to 150 °C
−
30
V
VDGR
drain-gate voltage (DC)
Tj = 25 to 150 °C; RGS = 20 kΩ
−
30
V
VGS
gate-source voltage (DC)
−
±20
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 5 V; Figure 2 and 3
−
1.9
A
Tsp = 100 °C; VGS = 5 V; Figure 2
−
1.2
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
−
7.5
A
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
−
0.83
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
−
0.83
A
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
−
3.3
A
http://www.twtysemi.com
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