TYSEMI PMV28UN

Product specification
PMV28UN
20 V, 3.3 A N-channel Trench MOSFET
Rev. 1 — 26 May 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Low threshold voltage
 Trench MOSFET technology
 Very fast switching
1.3 Applications
 Relay driver
 Low-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
ID
drain current
[1]
VGS = 4.5 V; Tamb = 25 °C
-8
-
8
V
-
-
3.3
A
-
25
32
mΩ
Static characteristics
drain-source on-state
resistance
RDSon
[1]
VGS = 4.5 V; ID = 3.3 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
SOT23 (TO-236AB)
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mbb076
S
1 of 4
Product specification
PMV28UN
20 V, 3.3 A N-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
Package
PMV28UN
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMV28UN
KU%
[1]
% = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-8
8
V
-
3.3
A
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
VGS = 4.5 V; Tamb = 100 °C
[1]
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
-
2.2
A
-
13
A
[2]
-
380
mW
[1]
-
520
mW
-
1800
mW
Tj
junction temperature
Tsp = 25 °C
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
0.6
A
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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2 of 4
Product specification
PMV28UN
20 V, 3.3 A N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
Min
Typ
Max
Unit
[1]
-
285
330
K/W
[2]
-
208
240
K/W
-
60
70
K/W
thermal resistance
from junction to solder
point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
http://www.twtysemi.com
[email protected]
3 of 4
Product specification
PMV28UN
20 V, 3.3 A N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.4
0.7
1
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 20 V; VGS = 0 V; Tj = 150 °C
-
-
25
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 4.5 V; ID = 3.3 A; Tj = 25 °C
-
25
32
mΩ
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
VGS = 4.5 V; ID = 3.3 A; Tj = 150 °C
-
38
48
mΩ
VGS = 2.5 V; ID = 3 A; Tj = 25 °C
-
30
40
mΩ
VGS = 1.8 V; ID = 2.4 A; Tj = 25 °C
-
39
65
mΩ
VDS = 10 V; ID = 3 A; Tj = 25 °C
-
15
-
S
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
-
5.8
9
nC
-
0.8
-
nC
-
1.7
-
nC
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
470
-
pF
-
123
-
pF
-
72
-
pF
-
9
-
ns
-
25
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
126
-
ns
tf
fall time
-
60
-
ns
-
0.7
1.2
V
VDS = 10 V; VGS = 4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 3 A
Source-drain diode
VSD
source-drain voltage
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IS = 0.6 A; VGS = 0 V; Tj = 25 °C
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