Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage ID drain current [1] VGS = 4.5 V; Tamb = 25 °C -8 - 8 V - - 3.3 A - 25 32 mΩ Static characteristics drain-source on-state resistance RDSon [1] VGS = 4.5 V; ID = 3.3 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) http://www.twtysemi.com [email protected] mbb076 S 1 of 4 Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package PMV28UN Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV28UN KU% [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V - 3.3 A ID drain current VGS = 4.5 V; Tamb = 25 °C [1] VGS = 4.5 V; Tamb = 100 °C [1] IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - 2.2 A - 13 A [2] - 380 mW [1] - 520 mW - 1800 mW Tj junction temperature Tsp = 25 °C -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.6 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. http://www.twtysemi.com [email protected] 2 of 4 Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - 285 330 K/W [2] - 208 240 K/W - 60 70 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. http://www.twtysemi.com [email protected] 3 of 4 Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.7 1 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 25 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 3.3 A; Tj = 25 °C - 25 32 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = 4.5 V; ID = 3.3 A; Tj = 150 °C - 38 48 mΩ VGS = 2.5 V; ID = 3 A; Tj = 25 °C - 30 40 mΩ VGS = 1.8 V; ID = 2.4 A; Tj = 25 °C - 39 65 mΩ VDS = 10 V; ID = 3 A; Tj = 25 °C - 15 - S VDS = 10 V; ID = 3 A; VGS = 4.5 V; Tj = 25 °C - 5.8 9 nC - 0.8 - nC - 1.7 - nC VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 470 - pF - 123 - pF - 72 - pF - 9 - ns - 25 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 126 - ns tf fall time - 60 - ns - 0.7 1.2 V VDS = 10 V; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = 3 A Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = 0.6 A; VGS = 0 V; Tj = 25 °C [email protected] 4 of 4