TYSEMI PMV22EN

Product specification
PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
Rev. 1 — 30 March 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
 Logic-level compatible
 Trench MOSFET technology
 Very fast switching
1.3 Applications
 Relay driver
 Low-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source
voltage
Tamb = 25 °C
-
-
30
V
VGS
gate-source
voltage
-20
-
20
V
ID
drain current
-
-
5.2
A
-
17
22
mΩ
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
[1]
drain-source
on-state
resistance
VGS = 10 V; ID = 5.2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
http://www.twtysemi.com
[email protected]
1 of 4
Product specification
PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
mbb076
SOT23 (TO-236AB)
S
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMV22EN
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tamb = 25 °C
-
30
V
VGS
gate-source voltage
drain current
ID
peak drain current
IDM
total power dissipation
Ptot
-20
20
V
VGS = 10 V; Tamb = 25 °C
[1]
-
5.2
A
VGS = 10 V; Tamb = 100 °C
[1]
-
3.3
A
-
20
A
-
510
mW
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[2]
[1]
Tsp = 25 °C
-
930
mW
-
4170
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
930
mA
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
http://www.twtysemi.com
[email protected]
2 of 4
Product specification
PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
Min
Typ
Max
Unit
[1]
-
207
245
K/W
[2]
-
116
135
K/W
-
20
30
K/W
thermal resistance
from junction to solder
point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
http://www.twtysemi.com
[email protected]
3 of 4
Product specification
PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
1
1.5
2.5
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tamb = 25 °C
-
-
1
µA
VDS = 30 V; VGS = 0 V; Tamb = 150 °C
-
-
10
µA
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
forward
transconductance
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 10 V; ID = 5.2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C
-
17
22
mΩ
VGS = 10 V; ID = 5.2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01; Tj = 150 °C
-
27
34
mΩ
VGS = 4.5 V; ID = 4.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C
-
22
29
mΩ
VDS = 5 V; ID = 3 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.01; Tj = 25 °C
-
12
-
S
ID = 3 A; VDS = 15 V; VGS = 10 V;
Tj = 25 °C
-
8.6
13
nC
-
1.2
-
nC
-
1.3
-
nC
-
480
-
pF
-
110
-
pF
-
52
-
pF
-
4
-
ns
-
15
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
100
-
ns
tf
fall time
-
40
-
ns
-
0.72
1.2
V
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 3 A
Source-drain diode
VSD
source-drain voltage
http://www.twtysemi.com
IS = 0.93 A; VGS = 0 V; Tj = 25 °C
[email protected]
4 of 4