TYSEMI NX2301P

Product specification
NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
„
„
„
„
1.8 V RDSon rated for Low Voltage Gate Drive
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
„
„
„
„
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS
VGS
Conditions
Min
Typ
Max
Unit
drain-source voltage
Tamb = 25 °C
-
-
−20
V
gate-source voltage
Tamb = 25 °C
-
-
±8
V
ID
drain current
Tamb = 25 °C;
VGS = −4.5 V
[1]
-
-
−2
A
RDSon
drain-source on-state
resistance
Tj = 25 °C;
VGS = −4.5 V;
ID = −1 A
[2]
-
100
120
mΩ
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
[2]
Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 3
Product specification
NX2301P
20 V, 2 A P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
S
017aaa094
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
NX2301P
Description
Version
TO-236AB plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
NX2301P
MG*
[1]
* = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tamb = 25 °C
-
−20
V
VGS
gate-source voltage
Tamb = 25 °C
-
±8
V
drain current
VGS = −4.5 V
ID
IDM
http://www.twtysemi.com
peak drain current
Tamb = 25 °C
-
−2
A
Tamb = 100 °C
-
−1.2
A
-
−6
A
Tamb = 25 °C;
single pulse; tp ≤ 10 μs
[email protected]
[1]
4008-318-123
2 of 3
Product specification
NX2301P
20 V, 2 A P-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Ptot
total power dissipation
Tamb = 25 °C
Min
Max
Unit
[2]
-
400
mW
[1]
-
710
mW
-
2.8
W
Tsp = 25 °C
Tj
junction temperature
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
-
−0.7
A
Source-drain diode
source current
IS
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 3