TYSEMI PMV65XP

Product specification
PMV65XP
20 V, single P-channel Trench MOSFET
12 February 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
Low threshold voltage
Low on-state resistance
Trench MOSFET technology
3. Applications
•
•
•
•
Low power DC-to-DC converters
Load switching
Battery management
Battery powered portable equipment
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-20
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
VGS = -4.5 V; Tsp = 25 °C
-
-
-4.3
A
VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C
-
58
74
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
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Product specification
PMV65XP
20 V, single P-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
S
TO-236AB (SOT23)
017aaa257
6. Ordering information
Table 3.
Ordering information
Type number
Package
PMV65XP
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PMV65XP
%M9
[1]
% = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-20
V
VGS
gate-source voltage
-12
12
V
ID
drain current
-
-4.3
A
VGS = -4.5 V; Tsp = 25 °C
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-2.8
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-1.8
A
-
-16
A
[2]
-
480
mW
[1]
-
833
mW
-
4165
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
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Product specification
PMV65XP
20 V, single P-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
Min
Typ
Max
Unit
[1]
-
230
260
K/W
[2]
-
125
150
K/W
-
25
30
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.47
-0.65
-0.9
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -20 V; VGS = 0 V; Tj = 150 °C
-
-
-100
µA
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Product specification
PMV65XP
20 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IGSS
gate leakage current
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C
-
58
74
mΩ
VGS = -4.5 V; ID = -2.8 A; Tj = 150 °C
-
82
105
mΩ
VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C
-
67
92
mΩ
VGS = -1.8 V; ID = -1 A; Tj = 25 °C
-
87
135
mΩ
VDS = -10 V; ID = -2.8 A; Tj = 25 °C
-
15
-
S
total gate charge
VDS = -6 V; ID = -2.8 A; VGS = -4.5 V;
-
7.7
-
nC
QGS
gate-source charge
Tj = 25 °C
-
1
-
nC
QGD
gate-drain charge
-
1.65
-
nC
Ciss
input capacitance
VDS = -20 V; f = 1 MHz; VGS = 0 V;
-
744
-
pF
Coss
output capacitance
Tj = 25 °C
-
65
-
pF
Crss
reverse transfer
capacitance
-
53
-
pF
td(on)
turn-on delay time
VDS = -6 V; VGS = -4.5 V; RG(ext) = 6 Ω;
-
7
-
ns
tr
rise time
Tj = 25 °C; ID = -1 A
-
18
-
ns
td(off)
turn-off delay time
-
135
-
ns
tf
fall time
-
68
-
ns
-
-0.8
-1.2
V
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
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IS = -0.9 A; VGS = 0 V; Tj = 25 °C
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