TYSEMI PMV48XP

Product specification
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 — 21 December 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
„ Logic-level compatible
„ Very fast switching
„ Trench MOSFET technology
1.3 Applications
„ High-side loadswitch
„ Relay driver
„ High-speed line driver
„ Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source
voltage
Tamb = 25 °C
-
-
-20
V
VGS
gate-source
voltage
-12
-
12
V
ID
drain current
-
-
-3.5
A
-
48
55
mΩ
VGS = -4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
[1]
drain-source
on-state
resistance
VGS = -4.5 V; ID = -2.4 A;
pulsed; tp ≤ 300 µs; δ ≤ 0.01;
Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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1 of 4
Product specification
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
SOT23 (TO-236AB)
S
017aaa094
3. Ordering information
Table 3.
Ordering information
Type number
PMV48XP
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMV48XP
KN%
[1]
% = placeholder for manufacturing site code
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Product specification
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tamb = 25 °C
-
-20
V
VGS
gate-source voltage
-12
12
V
-
-3.5
A
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
VGS = -4.5 V; Tamb = 100 °C
[1]
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
-
-2.2
A
-
-14
A
[2]
-
510
mW
[1]
-
930
mW
-
4150
mW
Tj
junction temperature
Tsp = 25 °C
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-1
A
Source-drain diode
source current
IS
[1]
Tamb = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min
Typ
[1]
-
213
245
K/W
[2]
-
117
135
K/W
-
25
30
K/W
thermal resistance
from junction to solder
point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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[email protected]
Max
Unit
3 of 4
Product specification
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.75
-1
-1.25
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tamb = 25 °C
-
-
-1
µA
IGSS
gate leakage current
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -2.4 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
-
48
55
mΩ
VGS = -4.5 V; ID = -2.4 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 150 °C
-
70
80
mΩ
VGS = -2.5 V; ID = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
-
71
81
mΩ
VDS = -12 V; ID = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
-
12
-
S
ID = -1 A; VDS = -10 V; VGS = -4.5 V;
Tj = 25 °C
-
8.5
11
nC
-
1.8
-
nC
-
1.8
-
nC
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
tf
VGS = 0 V; VDS = -10 V; f = 1 MHz;
Tj = 25 °C
VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = -1 A
-
1000
-
pF
-
130
-
pF
-
90
-
pF
-
11
-
ns
-
13
-
ns
turn-off delay time
-
61
-
ns
fall time
-
23
-
ns
-
-0.82
-1.2
V
Source-drain diode
VSD
source-drain voltage
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IS = -2.4 A; VGS = 0 V; Tj = 25 °C;
tp ≤ 300 µs; δ ≤ 0.01
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