Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1.3 Applications High-side loadswitch Relay driver High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current - - -3.5 A - 48 55 mΩ VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -2.4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. http://www.twtysemi.com [email protected] 1 of 4 Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) S 017aaa094 3. Ordering information Table 3. Ordering information Type number PMV48XP Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV48XP KN% [1] % = placeholder for manufacturing site code http://www.twtysemi.com [email protected] 2 of 4 Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - -20 V VGS gate-source voltage -12 12 V - -3.5 A ID drain current VGS = -4.5 V; Tamb = 25 °C [1] VGS = -4.5 V; Tamb = 100 °C [1] IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - -2.2 A - -14 A [2] - 510 mW [1] - 930 mW - 4150 mW Tj junction temperature Tsp = 25 °C - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -1 A Source-drain diode source current IS [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Min Typ [1] - 213 245 K/W [2] - 117 135 K/W - 25 30 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. http://www.twtysemi.com [email protected] Max Unit 3 of 4 Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.25 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tamb = 25 °C - - -1 µA IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA RDSon drain-source on-state resistance VGS = -4.5 V; ID = -2.4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 48 55 mΩ VGS = -4.5 V; ID = -2.4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 150 °C - 70 80 mΩ VGS = -2.5 V; ID = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 71 81 mΩ VDS = -12 V; ID = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 12 - S ID = -1 A; VDS = -10 V; VGS = -4.5 V; Tj = 25 °C - 8.5 11 nC - 1.8 - nC - 1.8 - nC gfs forward transconductance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VGS = 0 V; VDS = -10 V; f = 1 MHz; Tj = 25 °C VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = -1 A - 1000 - pF - 130 - pF - 90 - pF - 11 - ns - 13 - ns turn-off delay time - 61 - ns fall time - 23 - ns - -0.82 -1.2 V Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = -2.4 A; VGS = 0 V; Tj = 25 °C; tp ≤ 300 µs; δ ≤ 0.01 [email protected] 4 of 4