Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 20 0.320@ VGS=1.8V SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2020 is Pb-free. 1 G 2 S Features Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-23 3 W28* 2 1 W28 = Device Code * Applications = Month (A~Z) Marking Order information z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift Device Package Shipping WNM2020-3/TR SOT-23 3000/Reel&Tape z http://www.twtysemi.com [email protected] 1 of 3 Product specification WNM2020 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 TA=25°C Continuous Drain Current a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current b TA=70°C TA=25°C Maximum Power Dissipation b TA=70°C ID PD ID PD Unit V 0.90 0.83 0.72 0.66 0.38 0.32 0.24 0.20 0.79 0.71 0.63 0.57 0.29 0.24 0.19 0.15 A W A W Pulsed Drain Current c IDM 1.4 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t 10 s Steady State t 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 270 325 320 385 360 420 425 520 260 300 a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. http://www.twtysemi.com [email protected] Unit °C/W 2 of 3 Product specification WNM2020 o Electronics Characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±5V VGS(TH) VGS = VDS, ID = 250uA 20 V =0V 1 uA ±5 uA 0.58 0.85 V VGS = 4.5V, ID = 0.55A 220 310 VGS = 2.5V, ID = 0.45A 260 360 VGS = 1.8V, ID = 0.35A 320 460 VDS = 5 V, ID = 0.55A 2.0 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.45 m S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 50 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 0.06 Gate-to-Source Charge QGS ID = 0.55A 0.15 Gate-to-Drain Charge QGD VGS = 0 V, f = 100 kHz, VDS = pF 13 10 V 8 1.15 nC 0.23 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 22 Rise Time tr VDD=10V, Turn-Off Delay Time td(OFF) ID =0.55A, RG=6Ω Fall Time tf 80 VGS=4.5V, ns 700 380 BODY DIODE CHARACTERISTICS Forward Voltage http://www.twtysemi.com VSD VGS = 0 V, IS = 0.35A [email protected] 0.5 0.7 1.5 V 3 of 3