Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 20 0.052@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. 1 2 Standard Product WNM2023 is Pb-free. G S Pin configuration (Top view) Features 3 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-3L W04* 2 1 W04 = Device Code * = Month (A~Z) Marking Applications Order information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging http://www.twtysemi.com [email protected] Device Package Shipping WNM2023-3/TR SOT-23-3L 3000/Reel&Tape 1 of 3 Product specification WNM2023 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TA=25°C Continuous Drain Current a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current b TA=70°C TA=25°C Maximum Power Dissipation b TA=70°C ID PD ID PD Unit V 3.2 2.9 2.5 2.3 0.8 0.7 0.5 0.4 2.9 2.7 2.3 2.1 0.6 0.5 0.4 0.3 A W A W Pulsed Drain Current c IDM 10 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA Typical Maximum 125 150 140 175 150 180 165 210 60 75 RθJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. http://www.twtysemi.com [email protected] Unit °C/W 2 of 3 Product specification WNM2023 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA 20 V Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS = 0V 1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±8V ±100 nA VGS(TH) VGS = VDS, ID = 250uA 0.6 1 V VGS = 4.5V, ID = 3.2A 38 47 VGS =-2.5V, ID =3.1A 44 55 VGS = 1.8V, ID = 1.5A 52 66 VDS = 5 V, ID =3.1A 11 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.45 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS =4.5 V, V DS =10 V, 0.45 Gate-to-Source Charge QGS ID = 3.1A 0.6 Gate-to-Drain Charge QGD 500 VGS = 0 V, f = 1.0 MHz, VDS = pF 62 10 V 58 8.05 nC 2.65 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf 5 8 VGS = 4.5 V, VDS = 10 V, 6 9 RL=3.5 Ω, RG=6 Ω 30 45 8 12 0.62 1.5 ns BODY DIODE CHARACTERISTICS Forward Voltage http://www.twtysemi.com VSD VGS = 0 V, IS = 1.0A [email protected] 0.5 V 3 of 3