Product specification NTR4501N Power MOSFET V(BR)DSS RDS(on) TYP ID MAX (Note 1) 70 m @ 4.5 V 3.6 A 85 m @ 2.5 V 3.1 A 20 V, 3.2 A, Single N−Channel, SOT−23 20 V Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available N−Channel D Applications • Load/Power Switch for Portables • Load/Power Switch for Computing • DC−DC Conversion G S MAXIMUM RATINGS (TJ= 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V ID 3.2 A 2.4 A 1.25 W Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C Steady State Power Dissipation (Note 1) Steady State Pulsed Drain Current tp = 10 s PD IDM 10.0 A TJ, Tstg −55 to 150 °C Continuous Source Current (Body Diode) IS 1.6 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Symbol Max Unit Junction−to−Ambient (Note 1) RJA 100 °C/W Junction−to−Ambient (Note 2) RJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. http://www.twtysemi.com 3 Drain 2 SOT−23 CASE 318 STYLE 21 [email protected] TR1 1 Gate TR1 M 2 Source = Specific Device Code = Date Code ORDERING INFORMATION NTR4501NT1 NTR4501NT1G NTR4501NT3 THERMAL RESISTANCE RATINGS MARKING DIAGRAM/ PIN ASSIGNMENT 1 Device Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Parameter 3 M Parameter NTR4501NT3G Package Shipping† SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel SOT−23 10000 / Tape & Reel SOT−23 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 of 2 Product specification NTR4501N Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 A 20 24.5 V 22 mV/°C OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current IDSS VGS = 0 V TJ = 25°C 1.5 A VDS = 16 V TJ = 85°C 10 A ±100 nA 1.2 V IGSS VDS = 0 V, VGS = ±12 V Gate Threshold Voltage (Note 3) VGS(TH) VGS = VDS, ID = 250 A Negative Threshold Temperature Coefficient VGS(TH)/TJ Gate−to−Source Leakage Current TY CHARACTERISTICS Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.65 −2.3 mV/°C VGS = 4.5 V, ID = 3.6 A 70 80 VGS = 2.5 V, ID = 3.1 A 85 105 VDS = 5.0 V, ID = 3.6 A 9 m S CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 200 VGS = 0 V, f = 1.0 MHz, VDS = 10 V 80 pF 50 QG(TOT) 2.4 VGS = 4.5 V, VDS = 10 V, ID = 3.6 A Gate−to−Source Gate Charge QGS Gate−to−Drain Charge QGD 0.6 td(on) 6.5 6.0 0.5 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time tr Turn−Off Delay Time td(off) Fall Time VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 tf 12 ns 12 3 SOURCE−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, ISD = 1.6 A 0.8 1.2 V 7.1 VGS = 0 V, dIS/dt = 100 A/s, A/s IS = 1.6 A QRR 5 ns 1.9 3.0 nC 3. Pulse Test: Pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. http://www.twtysemi.com [email protected] 2 of 2