Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) -20 Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V Descriptions SOT-23 D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2015 is Pb-free and 1 2 G S Halogen-free. Pin configuration (Top view) Features 3 WT1* z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 2 1 WT1= Device Code * = Month (A~Z) Marking Applications Order information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging http://www.twtysemi.com Device Package Shipping WPM2015-3/TR SOT-23 3000/Reel&Tape [email protected] 1 of 3 Product specification WPM2015 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS f8 TA=25°C Continuous Drain Current a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current b TA=70°C TA=25°C Maximum Power Dissipation b TA=70°C ID PD ID PD Unit V -2.4 -2.2 -1.9 -1.7 0.9 0.8 0.5 0.5 -2.2 -2.0 -1.7 -1.6 0.7 0.6 0.5 0.4 A W A W Pulsed Drain Current c IDM -10 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t 10 s Steady State t 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 105 135 120 155 130 160 145 190 60 75 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<380μs, Duty Cycle<2% d Maximum junction temperature TJ=150°C. http://www.twtysemi.com [email protected] Unit °C/W 2 of 3 Product specification WPM2015 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = f8V VGS(TH) VGS = VDS, ID = -250uA -20 V -1 uA f100 nA -0.62 -0.81 V VGS = -4.5V, ID = -2.7A 81 110 VGS = -2.5V, ID = -2.2A 103 150 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance CAPACITANCES, b, c RDS(on) -0.40 m CHARGES Input Capacitance CISS VGS = 0 V, 534 Output Capacitance COSS f = 1.0 MHz, 62 Reverse Transfer Capacitance CRSS VDS = -10 V 54 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = -4.5 V, VDS = -10 V, ID = -2.7A pF 7.3 0.5 nC 1.25 1.15 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) VGS = -4.5 V, 8.0 Rise Time tr VDS = -10 V, 6.4 Turn-Off Delay Time td(OFF) ID=-1.2A, 41.0 Fall Time tf RG=6 7.0 VSD VGS = 0 V, IS = -0.9A ns BODY DIODE CHARACTERISTICS Forward Voltage http://www.twtysemi.com [email protected] -0.74 -1.5 V 3 of 3