Product specification WPM3012 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.058@ VGS=10V 0.080@ VGS=4.5V SOT-23 Descriptions D 3 The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging 1 2 G S circuit. Standard Product WPM3012 is Pb-free and Halogen-free. Pin configuration (Top view) 3 Features W32* z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 2 1 W32 = Device Code * Marking Order information Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging http://www.twtysemi.com = Month (A~Z) Device Package Shipping WPM3012-3/TR SOT-23 3000/Reel&Tape [email protected] 1 of 3 Product specification WPM3012 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 TA=25°C Continuous Drain Current a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current b TA=70°C TA=25°C Maximum Power Dissipation b TA=70°C ID PD ID PD Unit V -3.1 -2.9 -2.5 -2.3 0.9 0.8 0.6 0.5 -2.8 -2.6 -2.2 -2.1 0.7 0.6 0.5 0.4 A W A W Pulsed Drain Current c IDM -15 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t 10 s Steady State t 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 105 130 120 155 130 160 145 190 60 75 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<380μs, Duty Cycle<2% d Maximum junction temperature TJ=150°C. http://www.twtysemi.com [email protected] Unit °C/W 2 of 3 Product specification WPM3012 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±20V VGS(TH) VGS = VDS, ID = -250uA -30 V -1 uA ±100 nA -1.9 -2.5 V VGS = -10V, ID = -3.1A 58 68 VGS = -4.5V, ID = -2.8A 80 95 gFS VDS = -5 V, ID =-5.0A 8.2 Input Capacitance CISS VGS = 0 V, 654 Output Capacitance COSS f = 1.0 MHz, 67 Reverse Transfer Capacitance CRSS VDS = -20V 56 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance b, c Forward Transconductance CAPACITANCES, RDS(on) -1.5 m s CHARGES VGS = -10 V, VDS = -15V, ID = -3.1A pF 1.55 2.03 nC 3.15 12.9 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) VGS = -10 V, 9.6 Rise Time tr VDS = -15 V, 4.0 Turn-Off Delay Time td(OFF) RL=5, 34.8 Fall Time tf RG=15 7.2 VSD VGS = 0 V, IS = -1.0A -0.8 ns BODY DIODE CHARACTERISTICS Forward Voltage http://www.twtysemi.com [email protected] -1.5 V 3 of 3