UM0016 N-Ch 100V Fast Switching MOSFETs General Description Product Summery The UM0016 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM0016 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 100V 47mΩ 3.6A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Load Switch SOP8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 3.6 A 1 2.9 A 15 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 43.3 mJ IAS Avalanche Current 27 A 4 PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 Typ. --- 85 ℃/W RθJC Thermal Resistance Junction-Case1 --- 24 ℃/W 1 UM0016 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=3A --- 38 47 VGS=4.5V , ID=2A --- 40 50 1.0 1.5 2.5 V --- -5.52 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 10 VDS=80V , VGS=0V , TJ=55℃ --- --- 100 VGS=0V , ID=250uA VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=3A --- 6.2 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 3.2 Ω Qg Total Gate Charge (10V) --- 60 84 Qgs Gate-Source Charge --- 9.2 13 Qgd Gate-Drain Charge --- 9.9 14 VDS=80V , VGS=10V , ID=3A uA nC --- 10.8 21.6 Rise Time VDD=50V , VGS=10V , RG=3.3Ω --- 27 48.6 Turn-Off Delay Time ID=3A --- 56 112 Fall Time --- 24 48 Ciss Input Capacitance --- 3848 5387 Coss Output Capacitance --- 137 192 Crss Reverse Transfer Capacitance --- 82 115 Min. Typ. Max. Unit 13.4 --- --- mJ Min. Typ. Max. Unit --- --- 3.6 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=3A , dI/dt=100A/µs , TJ=25℃ --- --- 15 A --- --- 1.2 V --- 25 --- nS --- 29 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=27A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM0016 N-Ch 100V Fast Switching MOSFETs Typical Characteristics 37.0 15 ID=3A VGS=10V VGS=7V VGS=5V 9 36.0 RDSON (mΩ) ID Drain Current (A) 12 36.5 VGS=4.5V 6 35.5 VGS=3V 35.0 3 34.5 34.0 0 0 0.2 0.4 0.6 0.8 4 1 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 6 VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source 12 IS Source Current(A) 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 2.5 Normalized On Resistance 1.8 2.0 Normalized VGS(th) (V) 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 UM0016 N-Ch 100V Fast Switching MOSFETs 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4