UD3002 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The UD3002 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD3002 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 30V 18mΩ 30A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1 30 A 1 18 A 1 8.2 A 1 6.5 A 60 A Single Pulse Avalanche Energy 72 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 IAS Avalanche Current 21 A PD@TC=25℃ Total Power Dissipation4 25 W PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 4 Thermal Data Symbol RθJA RθJC Parameter Typ. Thermal Resistance Junction-ambient (Steady State) 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 5 ℃/W UD3002 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ VGS=10V , ID=15A --- 15 18 VGS=4.5V , ID=10A --- 22 30 1.2 1.5 2.5 V --- -5.2 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 21.6 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (4.5V) --- 6.2 8.7 Qgs Gate-Source Charge --- 2.4 3.4 Qgd Gate-Drain Charge --- 2.5 3.5 Td(on) VDS=15V , VGS=4.5V , ID=15A Turn-On Delay Time uA nC --- 3 6.0 Rise Time VDD=15V , VGS=10V , RG=3.3Ω, --- 7.6 14 Turn-Off Delay Time ID=15A --- 21 42 Fall Time --- 4 8 Ciss Input Capacitance --- 572 801 Coss Output Capacitance --- 81 113 Crss Reverse Transfer Capacitance --- 65 91 Min. Typ. Max. Unit 16 --- --- mJ Min. Typ. Max. Unit --- --- 30 A --- --- 60 A --- --- 1.2 V --- 17 --- nS --- 3 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=15A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD3002 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 27 ID=10A RDSON (mΩ) 24 21 18 15 4 Fig.1 Typical Output Characteristics 10 10 VDS=15V ID =15A VGS , Gate to Source Voltage (V) 60 IS Source Current(A) 8 VGS (V) Fig.2 On-Resistance v.s Gate-Source 70 7.5 50 40 30 TJ=150℃ TJ=25℃ 20 5 2.5 10 0 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 0 1.2 Fig.3 Forward Characteristics Of Reverse 3 6 9 QG , Total Gate Charge (nC) 12 15 Fig.4 Gate-Charge Characteristics 1.8 Normalized on resistance 1.8 1.4 Normalized VGS(th) 6 1.4 1 1.0 0.6 0.6 0.2 0.2 -50 0 50 100 -50 150 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 3 150 UD3002 N-Ch 30V Fast Switching MOSFETs 1000 100.00 F=1.0MHz 100us 10.00 Coss 100 1ms 10ms 100ms DC ID (A) Capacitance(pF) Ciss 1.00 Crss 0.10 o Tc=25 C Single Pulse 10 1 5 9 13 17 21 0.01 25 0.1 VDS Drain to Source Voltage(V) Fig.7 Capacitance 1 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM SINGLE PULSE TON D = TON/T T TJpeak = TC + PDM x RθJC 0.01 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4