XINDEYI UD3002

UD3002
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UD3002 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD3002 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
30V
18mΩ
30A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
TO252 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
[email protected]=25℃
[email protected]=100℃
[email protected]=25℃
[email protected]=70℃
IDM
EAS
Rating
Units
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
1
30
A
1
18
A
1
8.2
A
1
6.5
A
60
A
Single Pulse Avalanche Energy
72
mJ
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
IAS
Avalanche Current
21
A
[email protected]=25℃
Total Power Dissipation4
25
W
[email protected]=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
4
Thermal Data
Symbol
RθJA
RθJC
Parameter
Typ.
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
62
℃/W
---
5
℃/W
UD3002
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
30
---
---
V
Reference to 25℃ , ID=1mA
---
0.023
---
V/℃
VGS=10V , ID=15A
---
15
18
VGS=4.5V , ID=10A
---
22
30
1.2
1.5
2.5
V
---
-5.2
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
1
VDS=24V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=15A
---
21.6
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.5
5
Ω
Qg
Total Gate Charge (4.5V)
---
6.2
8.7
Qgs
Gate-Source Charge
---
2.4
3.4
Qgd
Gate-Drain Charge
---
2.5
3.5
Td(on)
VDS=15V , VGS=4.5V , ID=15A
Turn-On Delay Time
uA
nC
---
3
6.0
Rise Time
VDD=15V , VGS=10V , RG=3.3Ω,
---
7.6
14
Turn-Off Delay Time
ID=15A
---
21
42
Fall Time
---
4
8
Ciss
Input Capacitance
---
572
801
Coss
Output Capacitance
---
81
113
Crss
Reverse Transfer Capacitance
---
65
91
Min.
Typ.
Max.
Unit
16
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
30
A
---
---
60
A
---
---
1.2
V
---
17
---
nS
---
3
---
nC
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=10A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
2,6
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Conditions
1,6
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=15A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD3002
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
27
ID=10A
RDSON (mΩ)
24
21
18
15
4
Fig.1 Typical Output Characteristics
10
10
VDS=15V
ID =15A
VGS , Gate to Source Voltage (V)
60
IS Source Current(A)
8
VGS (V)
Fig.2 On-Resistance v.s Gate-Source
70
7.5
50
40
30
TJ=150℃
TJ=25℃
20
5
2.5
10
0
0
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
0
1.2
Fig.3 Forward Characteristics Of Reverse
3
6
9
QG , Total Gate Charge (nC)
12
15
Fig.4 Gate-Charge Characteristics
1.8
Normalized on resistance
1.8
1.4
Normalized VGS(th)
6
1.4
1
1.0
0.6
0.6
0.2
0.2
-50
0
50
100
-50
150
TJ ,Junction Temperature (℃ )
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
3
150
UD3002
N-Ch 30V Fast Switching MOSFETs
1000
100.00
F=1.0MHz
100us
10.00
Coss
100
1ms
10ms
100ms
DC
ID (A)
Capacitance(pF)
Ciss
1.00
Crss
0.10
o
Tc=25 C
Single Pulse
10
1
5
9
13
17
21
0.01
25
0.1
VDS Drain to Source Voltage(V)
Fig.7 Capacitance
1
10
VDS (V)
100
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
TON
D = TON/T
T
TJpeak = TC + PDM x RθJC
0.01
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4