UM6008 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The UM6008 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM6008 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 60V 90mΩ 3A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch SOP8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 1 3 A 1 2.4 A 12 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 10.73 mJ IAS Avalanche Current 11.2 A 4 PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 85 ℃/W --- 25 ℃/W UM6008 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.054 --- V/℃ VGS=10V , ID=3A --- 70 90 VGS=4.5V , ID=2A --- 80 100 1.2 --- 2.5 V --- -4.96 --- mV/℃ VDS=60V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 13 --- S Qg Total Gate Charge (4.5V) --- 5 7.0 Qgs Gate-Source Charge --- 1.68 2.4 Qgd Gate-Drain Charge --- 1.9 2.7 VDS=48V , VGS=4.5V , ID=2A uA nC --- 1.6 3.2 Rise Time VDS=30V , VGS=10V , RG=3.3Ω, --- 7.2 13 Turn-Off Delay Time ID=2A --- 25 50 Fall Time --- 14.4 28.8 Ciss Input Capacitance --- 511 715 Coss Output Capacitance --- 38 53 Crss Reverse Transfer Capacitance --- 25 35 Min. Typ. Max. Unit 2.5 --- --- mJ Min. Typ. Max. Unit --- --- 3 A --- --- 12 A --- --- 1.2 V --- 9.7 --- nS --- 5.8 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions Single Pulse Avalanche Energy5 VDD=25V , L=0.1mH , IAS=5A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=2A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11.2A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM6008 N-Ch 60V Fast Switching MOSFETs Typical Characteristics 100 12 ID=3A VGS=10V 95 VGS=7V VGS=5V 8 VGS=4.5V 6 RDSON (mΩ) ID Drain Current (A) 10 VGS=3V 4 90 85 80 2 0 75 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 2 Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 10 6 TJ=150℃ 4 TJ=25℃ 2 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 2.0 Normalized On Resistance IS Source Current(A) 8 1.5 1.0 0.5 -50 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 3 150 UM6008 N-Ch 60V Fast Switching MOSFETs 1000 100.00 F=1.0MHz Capacitance (pF) Ciss 100us 10.00 ID (A) 1ms 100 1.00 10ms Coss 100ms 0.10 o TA=25 C Single Pulse Crss 0.01 0.01 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance DC 0.1 1 VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TA+P DMXRθJA SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4