XINDEYI UD6004

UD6004
N-Ch 60V Fast Switching MOSFETs
General Description
Product Summery
The UD6004 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD6004 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
60V
30mΩ
25A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter.
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
TO252 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
[email protected]=25℃
[email protected]=100℃
IDM
Rating
Units
Drain-Source Voltage
60
V
Gate-Source Voltage
±20
V
1
25
A
1
18
A
50
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
34.5
mJ
IAS
Avalanche Current
22.6
A
4
[email protected]=25℃
Total Power Dissipation
34.7
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
62
℃/W
---
3.6
℃/W
UD6004
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
60
---
---
V
Reference to 25℃ , ID=1mA
---
0.063
---
V/℃
VGS=10V , ID=15A
---
25
30
VGS=4.5V , ID=10A
---
30
38
2.5
V
---
-5.24
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
---
---
1
VDS=48V , VGS=0V , TJ=55℃
---
---
5
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=15A
---
17
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
3.2
Qg
Total Gate Charge (4.5V)
---
12.56
---
Qgs
Gate-Source Charge
---
3.24
---
Qgd
Gate-Drain Charge
---
6.31
---
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Td(on)
VGS=VDS , ID =250uA
VDS=48V , VGS=4.5V , ID=10A
uA
Ω
nC
---
8
---
Rise Time
VDD=30V , VGS=10V , RG=3.3Ω,
---
14.2
---
Turn-Off Delay Time
ID=10A
---
24.4
---
Fall Time
---
4.6
---
Ciss
Input Capacitance
---
1345
---
Coss
Output Capacitance
---
72.5
---
Crss
Reverse Transfer Capacitance
---
54.4
---
Min.
Typ.
Max.
Unit
15.2
---
---
mJ
Min.
Typ.
Max.
Unit
Tr
Td(off)
Tf
Turn-On Delay Time
1.2
mΩ
VDS=25V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=15A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
---
---
25
A
---
---
50
A
---
---
1.2
V
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD6004
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
35
12
ID=12A
VGS=10V
VGS=7
33
VGS=5V
8
RDSON (mΩ)
ID Drain Current (A)
10
VGS=4.5V
VGS=3V
6
30
4
28
2
0
25
0
0.5
1
1.5
VDS , Drain-to-Source Voltage (V)
2
2
4
Fig.1 Typical Output Characteristics
6
8
VGS (V)
10
Fig.2 On-Resistance v.s Gate-Source
12
10
ID=12A
VGS Gate to Source Voltage (V)
IS Source Current(A)
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0.2
0.4
0.6
0.8
8
6
4
2
0
0
1
5
10
15
20
25
QG , Total Gate Charge (nC)
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.5
Normalized On Resistance
1.5
Normalized VGS(th)
2.0
1
1.5
0.5
1.0
0.5
0
-50
0
50
100
TJ ,Junction Temperature (℃)
-50
150
0
50
100
T J , Junction Temperature (℃)
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
3
150
UD6004
N-Ch 60V Fast Switching MOSFETs
10000
100.00
F=1.0MHz
Capacitance (pF)
Ciss
10.00
100us
1000
ID (A)
1ms
1.00
10ms
100m
DC
Coss
100
0.10
Crss
o
Tc=25 C
Single Pulse
0.01
10
1
5
9
13
17
VDS Drain to Source Voltage(V)
21
0.1
25
1
Fig.7 Capacitance
10
100
VDS (V)
1000
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
PDM
0.01
D = TON/T
SINGLE PULSE
0.01
0.00001
TON
0.0001
T
TJpeak = TC + PDM x RθJC
0.001
0.01
0.1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
1