UD6004 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The UD6004 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD6004 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 60V 30mΩ 25A Applications z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 1 25 A 1 18 A 50 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 34.5 mJ IAS Avalanche Current 22.6 A 4 PD@TC=25℃ Total Power Dissipation 34.7 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 3.6 ℃/W UD6004 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.063 --- V/℃ VGS=10V , ID=15A --- 25 30 VGS=4.5V , ID=10A --- 30 38 2.5 V --- -5.24 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 17 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.2 Qg Total Gate Charge (4.5V) --- 12.56 --- Qgs Gate-Source Charge --- 3.24 --- Qgd Gate-Drain Charge --- 6.31 --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Td(on) VGS=VDS , ID =250uA VDS=48V , VGS=4.5V , ID=10A uA Ω nC --- 8 --- Rise Time VDD=30V , VGS=10V , RG=3.3Ω, --- 14.2 --- Turn-Off Delay Time ID=10A --- 24.4 --- Fall Time --- 4.6 --- Ciss Input Capacitance --- 1345 --- Coss Output Capacitance --- 72.5 --- Crss Reverse Transfer Capacitance --- 54.4 --- Min. Typ. Max. Unit 15.2 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time 1.2 mΩ VDS=25V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 25 A --- --- 50 A --- --- 1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD6004 N-Ch 60V Fast Switching MOSFETs Typical Characteristics 35 12 ID=12A VGS=10V VGS=7 33 VGS=5V 8 RDSON (mΩ) ID Drain Current (A) 10 VGS=4.5V VGS=3V 6 30 4 28 2 0 25 0 0.5 1 1.5 VDS , Drain-to-Source Voltage (V) 2 2 4 Fig.1 Typical Output Characteristics 6 8 VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 10 ID=12A VGS Gate to Source Voltage (V) IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 8 6 4 2 0 0 1 5 10 15 20 25 QG , Total Gate Charge (nC) VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.5 Normalized On Resistance 1.5 Normalized VGS(th) 2.0 1 1.5 0.5 1.0 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃) -50 150 0 50 100 T J , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 3 150 UD6004 N-Ch 60V Fast Switching MOSFETs 10000 100.00 F=1.0MHz Capacitance (pF) Ciss 10.00 100us 1000 ID (A) 1ms 1.00 10ms 100m DC Coss 100 0.10 Crss o Tc=25 C Single Pulse 0.01 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 0.1 25 1 Fig.7 Capacitance 10 100 VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 T TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 4 1