XINDEYI UD7018

UD7018
N-Ch 75V Fast Switching MOSFETs
General Description
Product Summery
The UD7018 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD7018 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
BVDSS
RDS(ON)
ID
75V
11mΩ
62A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
z Power Tool Application
Features
z Advanced high cell density Trench technology
TO252 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
[email protected]=25℃
[email protected]=100℃
IDM
Rating
Units
Drain-Source Voltage
75
V
Gate-Source Voltage
±20
V
1
62
A
1
48
A
130
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
174
mJ
IAS
Avalanche Current
52
A
4
[email protected]=25℃
Total Power Dissipation
90
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
62
℃/W
---
1.4
℃/W
UD7018
N-Ch 75V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
2
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
△VGS(th)
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
75
---
---
V
Reference to 25℃ , ID=1mA
---
0.066
---
V/℃
VGS=10V , ID=20A
---
9
11
mΩ
2
---
4
V
mV/℃
VGS=VDS , ID =250uA
VGS(th) Temperature Coefficient
---
-5.64
---
VDS=60V , VGS=0V , TJ=25℃
---
---
1
VDS=60V , VGS=0V , TJ=55℃
---
---
5
uA
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=20A
---
52
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
3
Ω
Qg
Total Gate Charge (10V)
---
106
---
Qgs
Gate-Source Charge
---
19.6
---
Qgd
Gate-Drain Charge
---
16.5
---
---
19.4
---
Td(on)
VDS=15V , VGS=10V , ID=15A
Turn-On Delay Time
nC
Rise Time
VDD=30V , VGS=10V , RG=3.3Ω,
---
11.4
---
Turn-Off Delay Time
ID=1A
---
118.4
---
Fall Time
---
11.2
---
Ciss
Input Capacitance
---
7760
---
Coss
Output Capacitance
---
320
---
Crss
Reverse Transfer Capacitance
---
210
---
Min.
Typ.
Max.
Unit
58
---
---
mJ
Min.
Typ.
Max.
Unit
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=30A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
2,6
2
Diode Forward Voltage
VG=VD=0V , Force Current
VGS=0V , IS=A , TJ=25℃
---
---
62
A
---
---
130
A
---
---
1.2
V
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=52A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD7018
N-Ch 75V Fast Switching MOSFETs
Typical Characteristics
12
12
ID=12A
VGS=10V
11
VGS=8V
8
RDSON (mΩ)
ID Drain Current (A)
10
VGS=6V
10
6
VGS=5V
4
VGS=4V
9
2
0
8
0
0.05
0.1
0.15
VDS , Drain-to-Source Voltage (V)
0.2
4
6
Fig.1 Typical Output Characteristics
8
VGS (V)
10
Fig.2 On-Resistance v.s Gate-Source
12
10
ID=15A
VGS Gate to Source Voltage (V)
IS Source Current(A)
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0.2
0.4
0.6
0.8
8
6
4
2
0
0
1
VSD , Source-to-Drain Voltage (V)
44
66
88
110
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
1.5
Normalized VGS(th)
22
1.5
1
1.0
0.5
0.5
0
-50
0
50
100
TJ ,Junction Temperature ( ℃)
-50
150
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
3
150
UD7018
N-Ch 75V Fast Switching MOSFETs
10000
1000.00
Ciss
10us
Capacitance (pF)
100.00
1000
100us
ID (A)
10.00
Coss
10ms
100ms
DC
1.00
Crss
100
0.10
TC=25℃
Single Pulse
F=1.0MHz
10
1
5
0.01
9
13
17
VDS Drain to Source Voltage(V)
21
0.1
25
1
10
100
1000
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.3
0.1
0.1
0.05
PDM
0.02
0.01
0.01
0.00001
TON
D = TON/T
TJpeak = TC + PDM x RθJC
SINGLE PULSE
0.0001
0.001
T
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4