US2305
P-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The US2305 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US2305 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
RDS(ON)
ID
-20V
65mΩ
-4.2A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
SOT23 Pin Configuration
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
D
D
z Green Device Available
G
S
SOT-23
S
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 20
V
± 12
V
3
-4.2
A
3
-3.4
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
-10
A
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
1
Value
Unit
90
℃/W
US2305
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-4.5A
-
-
53
mΩ
VGS=-4.5V, ID=-4.2A
-
-
65
mΩ
VGS=-2.5V, ID=-2.0A
-
-
100
mΩ
VGS=-1.8V, ID=-1.0A
-
-
250
mΩ
VDS=VGS, ID=-250uA
-0.5
-
-
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=-5V, ID=-2.8A
-
9
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=55 C)
VDS=-16V, VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS= ± 12V
-
-
±100
nA
ID=-4.2A
-
10.6
-
nC
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
2.32
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.68
-
nC
VDS=-15V
-
5.9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-4.2A
-
3.6
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
32.4
-
ns
tf
Fall Time
RD=3.6Ω
-
2.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
-
pF
Coss
Output Capacitance
VDS=-15V
-
167
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
126
-
pF
Min.
Typ.
Diode Characteristics
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-4.2A, VGS=0V,
-
27.7
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
22
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
2
US2305
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
40
36
-5.0V
o
T A =25 C
28
30
-4.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
-5.0V
TA=150oC
32
20
-3.0V
10
-4.0V
24
65mΩ
20
-3.0V
16
12
8
V G = -2.0V
V G = -2.0V
4
0
0
0
2
4
6
8
0
10
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig.2 Typical Output Characteristics
Fig.1 Typical Output Characteristics
1.8
160
I D = -4.2A
V GS = -4.5V
I D =-4.2A
1.6
Normalized RDS(ON)
T A =25 o C
RDS(ON) (Ω )
120
80
1.4
1.2
1
0.8
0.6
40
0
1
2
3
4
5
-50
6
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig.4 Normalized On-Resistance
v.s Junction Temperature
Fig.3 On-Resistance v.s Gate Voltage
1.5
100
10
1
T j =25 o C
-VGS(th) (V)
-IS(A)
T j =150 o C
1
0.5
0.1
2.01E+08
0
0.01
0
0.4
0.8
1.2
-50
1.6
-V SD , Source-to-Drain Voltage (V)
0
50
T j , Junction Temperature (
100
o
150
C)
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
Fig.5 Forward Characteristic of Reverse Diode
3
US2305
P-Ch 20V Fast Switching MOSFETs
f=1.0MHz
10000
12
I D = -4.2A
V DS = -16V
65mΩ
1000
8
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
Coss
100
4
Crss
2
0
10
0
5
10
15
20
25
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig.8 Typical Capacitance Characteristics
Fig.7 Gate Charge Capacitance
1
100
Normalized Thermal Response (Rthja)
DUTY=0.5
10
-ID (A)
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
PDM
t
0.01
T
Duty factor = t/T
Peak T j = PDM x Rthja + Ta
0.01
Single Pulse
Rthja = 270℃
℃/W
0.001
0.1
1
10
100
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig.9 Maximum Safe Operating Area
0.001
0.01
0.1
1
10
100
Fig.10 Effective Transient Thermal Impedance
RD
VDS
D
VDS
0.8 x RATED VDS
G
G
S
S
-10 V
TO THE
OSCILLOSCOPE
D
TO THE
OSCILLOSCOPE
0.75 x RATED VDS
RG
1000
t , Pulse Width (s)
VGS
-1~-3mA
VGS
IG
Fig.11 Switching Time Circuit
ID
Fig.12 Gate Charge Circuit
4