US2410 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The US2410 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US2410 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) 20V 37mΩ ID 4.2A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±12 V 1 4.2 A 1 3.3 A 17 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W US2410 N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ VGS=4.5V , ID=4A --- 30 37 VGS=2.5V , ID=3A --- 36 45 0.5 0.7 1.2 V --- -3.1 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (4.5V) --- 8.6 12.0 Qgs Gate-Source Charge --- 1.37 1.9 Qgd Gate-Drain Charge --- 2.3 3.2 10.4 Td(on) VDS=15V , VGS=4.5V , ID=4A Turn-On Delay Time uA nC --- 5.2 Rise Time VDS=10V , VGS=4.5V , RG=3.3Ω --- 34 61 Turn-Off Delay Time ID=4A --- 23 46 Fall Time --- 9.2 18.4 Ciss Input Capacitance --- 635 889 Coss Output Capacitance --- 70 98 Crss Reverse Transfer Capacitance --- 63 88 Min. Typ. Max. --- --- 4.2 A --- --- 17 A --- --- 1.2 V --- 7.5 --- nS --- 2.1 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=4A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 Unit US2410 N-Ch 20V Fast Switching MOSFETs Typical Characteristics 45 18 16 VGS=4.5V 14 40 VGS=3V 12 VGS=2.5V RDSON (mΩ) ID Drain Current (A) ID=4A VGS=5V 35 10 8 VGS=1.8V 30 6 4 25 2 20 0 0 0.5 1 1.5 VDS , Drain-to-Source Voltage (V) 1 2 Fig.1 Typical Output Characteristics 3 5 VGS (V) 7 9 11 Fig.2 On-Resistance vs. Gate-Source IS Source Current(A) 6 4 TJ=175℃ TJ=25℃ 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 1.2 Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 -50 150 0 50 100 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 US2410 N-Ch 20V Fast Switching MOSFETs 1000 100.00 Ciss 100us 100 10ms ID (A) Capacitance (pF) 10.00 Coss 100ms 1.00 1s Crss 0.10 DC TA=25℃ Single Pulse F=1.0MHz 10 1 4 7 10 13 16 19 22 0.01 0.1 VDS Drain to Source Voltage (V) 1 Fig.7 Capacitance 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000