Datasheet

AO4292E
100V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
• ESD protected
• RoHS and Halogen-Free Compliant
Applications
ID (at VGS=10V)
100V
8A
RDS(ON) (at VGS=10V)
< 23mΩ
RDS(ON) (at VGS=4.5V)
< 33mΩ
Typical ESD protection
HBM Class 2
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4292E
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
TA=25°C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TA=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Rev.1.0: August 2015
Steady-State
Steady-State
A
IAS
14
A
EAS
10
mJ
VSPIKE
120
V
3.1
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
V
32
PD
TA=70°C
±20
6.2
IDM
Avalanche Current C
Units
V
8
ID
TA=70°C
C
Maximum
100
RθJA
RθJL
-55 to 150
Typ
31
59
16
www.aosmd.com
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4292E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
1.6
±10
µA
2.15
2.7
V
18.5
23
33
42
23.5
33
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=8A
30
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.72
IS
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=4.5V, ID=6A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=8A
Coss
Units
V
VDS=100V, VGS=0V
IDSS
Max
mΩ
mΩ
S
1
V
4
A
1200
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
0.5
pF
93
pF
6.3
pF
1.0
1.5
Ω
16.5
25
nC
8
14
nC
Qg(4.5V)
Total Gate Charge
Qgs
Gate Source Charge
3.5
nC
Qgd
Gate Drain Charge
2.5
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
3
ns
tD(off)
Turn-Off DelayTime
22
ns
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=50V, ID=8A
VGS=10V, VDS=50V, RL=6.25Ω,
RGEN=3Ω
3
ns
IF=8A, dI/dt=500A/µs
20
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
80
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2015
www.aosmd.com
Page 2 of 5
AO4292E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
40
4V
10V
VDS=5V
4.5V
30
30
6V
ID(A)
ID (A)
3.5V
20
20
125°C
25°C
10
10
VGS=3V
0
0
0
1
2
3
4
1
5
2
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
2.2
VGS=4.5V
25
RDS(ON) (mΩ)
3
20
VGS=10V
15
2
VGS=10V
ID=8A
1.8
1.6
1.4
1.2
VGS=4.5V
ID=6A
1
0.8
10
0
5
10
15
0
20
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
60
1.0E+01
ID=8A
1.0E+00
125°C
1.0E-01
40
IS (A)
RDS(ON) (mΩ)
50
125°C
1.0E-02
30
25°C
1.0E-03
20
1.0E-04
25°C
10
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: August 2015
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4292E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=50V
ID=8A
1400
Ciss
8
Capacitance (pF)
VGS (Volts)
1200
6
4
1000
800
600
400
2
200
0
Coss
Crss
0
0
4
8
12
16
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
40
60
1000
TJ(Max)=150°C
TA=25°C
10µs
10µs
RDS(ON)
limited
100µs
Power (W)
ID (Amps)
100
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
80
1ms
1.0
10ms
10
TJ(Max)=150°C
TA=25°C
0.1
100
DC
0.0
0.01
0.1
1
10
VDS (Volts)
100
1
0.0001 0.001
1000
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
0.1
PDM
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2015
www.aosmd.com
Page 4 of 5
AO4292E
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: August 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 5 of 5