WHXPCB AO4415

万和兴电子有限公司 www.whxpcb.com
AO4415
30V P-Channel MOSFET
General Description
Product Summary
The AO4415 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
VDS (V) = -30V
ID = -8 A (VGS = -20V)
RDS(ON) < 26mΩ (VGS = -20V)
RDS(ON) < 35mΩ (VGS = -10V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
A
Current
B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
±25
V
ID
-6.6
IDM
-40
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2.1
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
-8
TA=70°C
Pulsed Drain Current
Maximum
-30
RθJA
RθJL
Typ
24
54
21
°C
Max
40
75
30
Units
°C/W
°C/W
°C/W
AO4415
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
40
VGS=-20V, ID=-8A
TJ=125°C
Units
V
VDS=-24V, VGS=0V
Zero Gate Voltage Drain Current
Max
µA
±100
nA
-2.8
-3.5
V
21.5
26
29
35
28.5
35
A
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=-6V, ID=-5A
41
mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-8A
11.5
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.76
IS
Maximum Body-Diode Continuous Current
VGS=-10V, ID=-8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
893
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-1
V
-4.2
A
1100
pF
204
pF
151
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-8A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs
VGS=-10V, VDS=-15V, RL=1.8Ω,
RGEN=3Ω
pF
4
6
Ω
16.6
21
nC
3.2
nC
5.2
nC
10.5
ns
7.3
ns
15.1
ns
8.6
IF=-8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
mΩ
21
ns
26
10.7
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4415
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
30
-10V
VDS=-5V
25
-7V
20
-6V
15
15
-ID(A)
-ID (A)
20
-5V
10
10
125°C
-4.5V
5
5
VGS=-4V
25°C
0
0
0
1
2
3
4
5
2.5
-VDS (Volts)
Fig 1: On-Region Characteristics
4
4.5
5
5.5
6
6.5
1.60
ID=-8A
Normalized On-Resistance
55
VGS=-6V
50
45
RDS(ON) (mΩ )
3.5
-VGS(Volts)
Figure 2: Transfer Characteristics
60
40
35
VGS=-10V
30
25
20
VGS=-20V
15
VGS=-10V
1.40
VGS=-20V
1.20
1.00
0.80
10
0
5
10
15
20
0
25
100
90
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
ID=-8A
1.0E+00
80
70
1.0E-01
125°C
-IS (A)
RDS(ON) (mΩ )
3
1.0E-02
60
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
1.0E-03 MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
50
1.0E-04 THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
40 AND RELIABILITY WITHOUT NOTICE.
FUNCTIONS
25°C
125°C
1.0E-05
30
25°C
1.0E-06
20
0.0
0.2
0.4
0.6
0.8
1.0
4
8
12
16
20
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4415
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-8A
1250
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
1000
750
500
Coss
250
Crss
0
0
0
4
8
12
16
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
TJ(Max)=150°C
TA=25°C
10µs
30
RDS(ON)
limited
100µs
0.1s
Power (W)
-ID (Amps)
15
40
TJ(Max)=150°C, T A=25°C
1ms
10ms
1.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
5
20
1s
10
10s
DC
0.1
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
0.1
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DDOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.