WHXPCB AO4485

万和兴电子有限公司 www.whxpcb.com
AO4485
40V P-Channel MOSFET
General Description
Product Summary
The AO4485 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a DC-DC converter
application.
VDS (V) = -40V
ID = -10A
RDS(ON) < 15mΩ
RDS(ON) < 20mΩ
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
10 Sec
Steady State
Symbol
Drain-Source Voltage
VDS
-40
Gate-Source Voltage
VGS
Continuous Drain
Current A
Pulsed Drain Current
±20
TA=25°C
TA=70°C
ID
B
Avalanche Current G
Repetitive avalanche energy L=0.3mH
TA=25°C
A
Power Dissipation
TA=70°C
G
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
-9
-8
IAR
-28
EAR
118
1.7
2.0
1.1
RθJA
RθJL
-55 to 150
Typ
31
59
16
A
mJ
3.1
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
-10
-120
PD
V
-12
IDM
Units
V
Max
40
75
24
W
°C
Units
°C/W
°C/W
°C/W
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AO4485
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = -250µA, VGS = 0V
-40
-1
TJ = 55°C
-5
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±20V
Gate Threshold Voltage
VDS = VGS ID = -250µA
-1.7
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-120
±100
VGS = -10V, ID = -10A
Static Drain-Source On-Resistance
Max
-1.9
-2.5
12.5
15
19
23
16
20
Forward Transconductance
VDS = -5V, ID = -10A
25
VSD
Diode Forward Voltage
IS = -1A,VGS = 0V
IS
Maximum Body-Diode Continuous Current
-0.7
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
2500
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-20V, ID=-10A
2.5
µA
nA
V
A
VGS = -4.5V, ID = -8A
gFS
TJ=125°C
Units
V
VDS = -40V, VGS = 0V
VGS(th)
RDS(ON)
Typ
mΩ
S
-1
V
-3
A
3000
pF
260
pF
180
pF
4
6
Ω
42
55
nC
18.6
nC
7
nC
Qgd
Gate Drain Charge
8.6
nC
tD(on)
Turn-On DelayTime
9.4
ns
tr
Turn-On Rise Time
20
ns
tD(off)
Turn-Off DelayTime
55
ns
tf
trr
Turn-Off Fall Time
IF=-10A, dI/dt=100A/µs
38
Qrr
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
47
Body Diode Reverse Recovery Time
VGS=-10V, VDS=-20V,
RL= 2Ω, RGEN=3Ω
30
ns
49
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
0
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev1: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4485
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
VDS= -5V
-4.5V
100
80
-10V
-4V
60
ID(A)
ID (A)
80
60
40
-3.5V
40
125°C
20
20
VGS= -3V
25°C
0
0
0
1
2
3
4
5
1.5
20
2.5
3
3.5
4
4.5
5
Normalized On-Resistance
1.8
VGS= -4.5V
18
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
16
14
VGS= -10V
12
10
VGS= -10V
ID= -10A
1.6
1.4
VGS= -4.5V
ID= -7.5A
1.2
1.0
0.8
0
4
I12
dI/dt=100A/µs
20
F=-6.5A,16
8
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
35
1E+02
ID= -10A
1E+01
30
25
-IS (A)
RDS(ON) (mΩ )
1E+00
125°C
1E-01
125°C
1E-02
20
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
25°C
25°CPRODUCT DESIGN,
OUT OF 15
SUCH APPLICATIONS OR USES OF
ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1E-05
10
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4485
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
VDS= 15V
ID= -10A
3500
Capacitance (pF)
-VGS (Volts)
8
6
4
3000
Ciss
2500
2000
1500
Crss
1000
Coss
2
500
0
0
0
5
10
15
20
25
30
35
40
0
45
10
20
30
40
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
1000
TJ(Max)=150°C
TA=25°C
100
10
100µs
1
1ms
10ms
100ms
10s
RDS(ON)
limited
0.1
TJ(Max)=150°C
TA=25°C
DC
0.01
0.1
Power (W)
-ID (Amps)
10µs
-VDS (Volts)
Zθ JA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
10
1
0.0001
IF=-6.5A,
dI/dt=100A/µs
10
100
1
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com