WILLAS DTA114YCA

WILLAS
FM120-M+
DTA114YCATHRU
PNP Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features
• Low profile surface mounted application in order to
SOT-23
0.146(3.7)
0.130(3.3)
Min
---40
-------
Typ
-50
---70
-100
200
150
Max
--6
Unit
V
V
---
mA
-----
mW
ć
0.056(1.4)
0.040(1.0)
0.024(0.6)
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
0.031(0.8) Typ.
.006(0.15)MIN.
Symbol
Parameter
Method
2026
VCC
Supply voltage
• Polarity
: Indicated by cathode band
VIN
Input voltage
IO
Position : Any
• Mounting
Output current
IC(MAX)
Approximated 0.011 gram
PC • Weight
Power:dissipation
Tj
Junction temperature
.122(3.10)
.106(2.70)
0.071(1.8)
.063(1.60)
.047(1.20)
Epoxy
meets UL
V-0 flammability
rating
for94
overvoltage
protection.
• Guardring
high-speed
switching.
• Ultra
Moisure
Sensitivity
Level
1
Built-in
bias resistors
enable
themetal
configuration
of an inverter circuit
epitaxial planar
chip,
silicon junction.
• Silicon
without
connecting
input resistors
partsexternal
meet environmental
standards of
• Lead-free
MIL-STD-19500
/228 of thin-film resistors with complete
• The bias
resistors consist
for packingbiasing
code suffix
"G" input. They also have the
• RoHS
isolation
to product
allow negative
of the
Halogen
free
product
for
packing
code
suffix "H"
advantage of almost completely eliminating
parasitic effects.
Mechanical
data
• Only the on/off conditions need to be set for operation, making
device
design
easy rated flame retardant
: UL94-V0
• Epoxy
• Case : Molded plastic, SOD-123H
,
Absolute
maximum
ratings
@ 25к
• Terminals
:Plated
terminals,
solderable per MIL-STD-750
0.012(0.3) Typ.
Dimensions in inches and (millimeters)
.110(2.80)
MAXIMUM
CHARACTERISTICS
Tstg
Storage
temperatureRATINGS AND ELECTRICAL
-55
--150
ć
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Electrical Characteristics
@ 25к
RATINGS
Symbol
Parameter
Marking Code
VI(off)
Input voltage (VCC=-5V, IO=-100­A)
Maximum
Recurrent Peak (V
Reverse
Voltage
VI(on)
O=-0.3V, IO=-1mA)
VO(on)
Output
voltage (IO/II=-5mA/-0.25mA
Maximum
RMS
Voltage
II
Input
current
(VI=-5V)
Maximum
DC
Blocking
Voltage
IO(off)
Output current (VCC=-50V, VI=0)
Maximum
Average
Forward
GI
DC current
gainRectified
(VO=-5V,Current
IO=-5mA)
R1
Input resistance
Peak Forward Surge Current 8.3 ms single half sine-wave
R2/R1
Resistance ratio
superimposedTransition
on rated load
(JEDEC method)
frequency
fT
(VO=-10V,
IO=5mA,
f=100MHz)
Typical Thermal
Resistance
(Note
2)
Min
Typ
Max
12
13
-0.3
----20
V--RRM
-1.4 30
--V---RMS --- 14 -0.3 21
----- 20 -0.8830
VDC
-----0.5
68IO
---- 7.0
10
13
IFSM
3.7
4.7
5.7
--250
RΘJA
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
.008(0.20)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
---
Unit
V
V
V
mA
­A
14
40
15
50
28
35
42
.004(0.10)MAX.
50
60
40
16
60
MHz
56
70
105
140
80
100
150
200
.020(0.50)
.012(0.30)
@T A=125℃
NOTES:
-55 to +125
- 65 to +175
Suggested Solder
Pad Layout
0.50
0.70
0.85
0.9
0.92
.031
0.5.800
IR
.035
.900
10
.079
2.000
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
MARKING: 54
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
120
200
40
Dimensions
in
inches
and (millimeters)
120
-55 to +150
Maximum Forward Voltage at 1.0A DC
115
150
18
80
1.0
30
K¡
TSTG
CHARACTERISTICS
.003(0.08)
10
100
.055(1.40)
.035(0.89)
•
•
•
Pb-Free
package
is available
optimize
board space.
Low power loss, high efficiency.
•
RoHS product for packing code suffix ”G”
• High current capability, low forward voltage drop.
Halogen
surgeproduct
capability.for packing code suffix “H”
• High free
.083(2.10)
•
SOD-123H
inches
mm
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA114YCA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
Typical Characteristics
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.