WILLAS Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER FM120-M+ SESDLL5V0WB THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to DESCRIPTION optimize board space. The• Low SESDLL5V0WB is designed to protect voltage sensitive power loss, high efficiency. High current capability, low forward voltage capability, drop. • components from ESD. Excellent clamping low leakage, • High surge capability. and fast response time provide best in class protection on designs that • Guardring for overvoltage protection. are exposed to ESD. Because switching. of its small size, it is suited for use in • Ultra high-speed epitaxial chip,digital metal silicon junction. • Silicon cellular phones, MP3planar players, cameras and many other portable • Lead-free parts meet environmental standards of applications where board MIL-STD-19500 /228 space is at a premium. • RoHS product for packing code suffix "G" WBFBP-02C 0.146(3.7) 0.130(3.3) (1.0*0.6*0.5) 0.012(0.3) Typ. unit:mm 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant FEATURES • Case : Molded plastic, SOD-123H , z Reverse Working (Stand-Off) Voltage: V • Terminals :Plated terminals, solderable per 5.0 MIL-STD-750 z z z z z 0.031(0.8) Typ. Method 2026 Low Leakage • Polarity : Indicated by cathode band Response Time is Typically < 1 ns • Mounting Position : Any ESD Rating of Class 3 (> 16 kV) Per Human Body Model • Weight : Approximated 0.011 gram IEC61000−4−2 Level 4 ESD Protection 0.031(0.8) Typ. Dimensions in inches and (millimeters) AND ELECTRICAL CHARACTERISTICS Pb-FreeMAXIMUM packageRATINGS is available Ratings at 25℃ ambient temperature unless otherwise specified. RoHS product for packing code suffix ”G” Single phase half wave, 60Hz, resistive of inductive load. Halogen free product for packing code For capacitive load, derate current by 20% RATINGS suffix “H” SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 Maximum DC Blocking Voltage Maximum Ratings @Ta=25℃ Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Parameter superimposed on rated load (JEDEC method) IEC61000−4−2(ESD) Typical Thermal Resistance (Note 2) IO IFSM RΘJA CJ Typical Junction Capacitance (Note 1) 14 40 15 50 16 60 18 80 35 42 50 60 ESD Voltage Storage Temperature Range 120 200 56 70 105 140 V 80 100 150 200 V 40 ±２５ 120 ±２５ Air Contact -55 to +125 TJ Per Human Body Model TSTG Per Machine Model Operating Temperature Range 115 150 1.0 30 Limit Symbol 10 100 16 Unit ℃ KV -55 to +150 KV - 65 to +175 400 V FM1100-MH CHARACTERISTICS SYMBOL 100 mW FM1150-MH FM1200-MH Total Power Dissipation on FR-5 Board (Note 1)FM120-MH FM130-MH FM140-MH FM150-MH PD FM160-MH FM180-MH VF Maximum Forward Voltage at 1.0A DC 0.50 Maximum Average Reverse Current at @T A=25℃ Thermal Resistance Junction−to−Ambient IR Rated DC Blocking Voltage @T A=125℃ Lead Solder Temperature − Maximum (10 Second Duration) NOTES: 1Measured at 1 MHZ and applied reverse voltage ofRange 4.0 VDC. Junction and Storage Temperature 0.70 RΘJA TL 0.5 1250 10 260 Tj, Tstg 0.9 0.85 -55 ~ +150 ℃/W U 0.92 m ℃ ℃ 2- Thermal Resistance From Junction to Ambient Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. 2012-06 2012-09 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESDLL5V0WB THRU Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. low forward voltage drop. • High current capability, ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. Parameter Symbol • Silicon epitaxial planar chip, metal silicon junction. IPP Reverse Peak Pulse Current parts meet environmental standards of • Lead-free Maximum 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) /228Voltage @ IPP VCMIL-STD-19500 Clamping • RoHS product for packing code suffix "G" VRWM Working Reverse Halogen free productPeak for packing codeVoltage suffix "H" data IRMechanical Maximum Reverse Leakage Current @ VRWM 0.040(1.0) 0.024(0.6) Epoxy : UL94-V0 ratedVoltage flame retardant V•BR Breakdown @ IT IT• Case : Molded Test plastic, CurrentSOD-123H • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. , 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) Ratings at 25℃ ambient temperature unless otherwise specified. VRWM IR(μA) VBR(V)@IT Single phase half wave, 60Hz, resistive Deviceof inductive load. (V) (Note2) @VRWM For capacitiveDevice* load, derate current by 20% Marking RATINGS Marking Code SESDLL5V0WB H Max *Other voltages available upon request. VC C(pF)@ @IPP=5A 0.1 VRRM 12 5.8 138.0 20 30 14 1.0 40 15 12.5 16 50 60 14 21 28of 25℃. 35 Maximum Voltage 2. VBRRMS is measured with a pulse test current IVTRMS at an ambient temperature Maximum DC Blocking Voltage 20 30 40 50 VDC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 60 10 15 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 IFSM RΘJA Typical Thermal Resistance (Note 2) 12 18 80 42 IO Maximum Average Forward Rectified Current VR=0V,f=1MHz MaxFM120-MH MinFM130-MH MaxFM140-MH mA FM150-MHVFM160-MH FM180-MH Typ Max FM1100-MH FM1150-MH FM1200-MH SYMBOL 5.0 Maximum Recurrent Peak Reverse Voltage IT 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.