RoHS D965 D965 D T ,. L TO-92 TRANSISTOR (NPN) FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM: 0.75 W (Tamb=25℃) 3. BASE Collector current ICM: 5 A Collector-base voltage V(BR)CBO: 42 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter R T Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage E Emitter cut-off current J E DC current gain W Collector-emitter saturation voltage O IC N unless otherwise specified) Test conditions MIN TYP MAX UNIT Ic=1mA, IE=0 42 V V(BR)CEO Ic= 1mA, IB=0 22 V V(BR)EBO IE= 10µA, IC=0 6 V ICBO VCB= 30V, IE=0 0.1 µA IEBO VEB= 6V, IC=0 0.1 µA hFE(1) VCE= 2V, IC= 0.15 mA 150 hFE(2) VCE= 2V, IC = 500 mA 340 hFE(3) VCE=2V, IC = 2000 mA 150 VCE(sat) IC=3000mA, IB=100 mA C E L Collector cut-off current C O 1 2 3 950 0.35 V CLASSIFICATION OF hFE(2) Rank Range WEJ ELECTRONIC CO. R T 340-600 560-950 Http:// www.wej.cn E-mail:[email protected]