RoHS BCW61B SOT-23 Plastic-Encapsulate Transistors BCW61B TRANSISTOR (PNP) D T ,. L SOT-23 1. BASE FEATURES 2. EMITTER 1. 0 3. COLLECTOR Power dissipation TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage O IC N C Unit: mm unless otherwise specified) R T Symbol O 0. 4 2. 9 Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -32 V Operating and storage junction temperature range 0. 95 W (Tamb=25℃) 1. 9 0.25 0. 95 PCM: 2. 4 1. 3 Test conditions MIN TYP MAX UNIT Ic= -10µA, IE=0 -32 V V(BR)CEO Ic= -1mA, IB=0 -32 V V(BR)EBO IE=-10µA, IC=0 -5 V ICBO VCB=-32V, IE=0 -0.02 µA IEBO VEB=-4V, IC=0 -0.02 µA hFE VCE=-5V, IC= -2mA Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-1.25mA -0.55 V Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-1.25mA -1.05 V C E L Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain J E E Transition frequency W Marking V(BR)CBO fT VCE= -5V, IC=-10mA f=100MHz 180 310 100 BB WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] MHz