RoHS 2SC1623 D T ,. L SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation PCM: 200 IC TJ, Tstg: -55℃ to +150℃ Parameter Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO C E L Collector cut-off current O Test R T V(BR)CBO 1. 60¡ À0. 05 N unless otherwise specified) Symbol Collector-base breakdown voltage C 2. 80¡ À0. 05 1. 9 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS(Tamb=25℃ O 0. 95¡ À0. 025 mW (Tamb=25℃) 2. 92¡ À0. 05 TRANSISTOR (NPN) 0. 35 2SC1623 conditions MIN TYP MAX UNIT Ic=100µA, IE=0 60 V Ic=1mA, IB=0 50 V IE=100µA, IC=0 5 V ICBO VCB=60V, IE=0 0.1 µA IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=6V, IC=1mA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V fT VCE=6V, IC=10mA Emitter cut-off current DC current gain J E E Transition frequency 90 600 250 MHz CLASSIFICATION OF hFE(1) Rank W Range Marking L4 L5 L6 L7 90-180 135-270 200-400 300-600 L4 L5 L6 L7 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]