WINNERJOIN BAL99

RoHS
BAL99LT1
SWITCHING DIODE
Features
Power dissipation
。
P D : 350 mW (Tamb=25 C)
Pluse Drain
I F : 100 mA
Reverse Voltage
V R : 70V
Operating and storage junction temperature range
。
。
T j , T stg : -55 C to +150 C
3
1
2
0.95
2.9
1.9
2.4
1.3
0.95
IC
3
1
2
CATHODE
Marking:JF
Electro-Optical Characteristics
C
E
L
Parameter
Reverse breakdown voltage
Reverse Voltage leakage current
Forward Voltage
J
E
R
T
E
Symbol
C
1.BASE
2.EMITTER
3.COLLECTOR
0.4
1.
ANODE-CATHODE
ANODE
D
T
,. L
O
SOT-23
N
O
Unit:mm
。
(Ta=25 C)
Test Condition
MIN.
V (BR)
I R =100 A
70
IR
V R =70V
2.5
I F =1mA
715
I F =10mA
855
I F =50mA
1000
I F =150mA
1250
VF
Diode Capacitance
CD
Reverse Recovery Time
t rr
V R =0V
f=1MHz
MAX.
Unit
V
Http:// www.wej.cn
mV
1.5
pF
6
nS
W
WEJ ELECTRONIC CO.
A
E-mail:[email protected]
RoHS
BAL99LT1
Typical Characteristics
10
I R ,REVERSE CURRENT ( A)
。
T A =150 C
。
T A =125 C
1.0
。
T A =85 C
0.1
。
T A =55 C
0.01
。
0.001
T A =25 C
0
10
20
30
40
50
V R ,REVERSE VOLTAGE(VOLTS)
Leakage Current
N
I F ,FORWARD CURRENT (mA)
100
R
T
10
。
T A =85 C
1.0
C
E
L
0.1
0.2
0.4
IC
C
D
T
,. L
O
O
。
T A =25 C
。
T A =-40 C
0.6
0.8
1.0
1.2
V F ,FORWARD VOLTAGE(VOLTS)
W
0.68
C D ,DIODE CAPACTANCE(pF)
J
E
E
Forward Voltage
0.64
0.6
0.56
0.52
0
2
4
6
8
V R ,REVERSE VOLTAGE(VOLTS)
Capacitance
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]