RoHS BAL99LT1 SWITCHING DIODE Features Power dissipation 。 P D : 350 mW (Tamb=25 C) Pluse Drain I F : 100 mA Reverse Voltage V R : 70V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C 3 1 2 0.95 2.9 1.9 2.4 1.3 0.95 IC 3 1 2 CATHODE Marking:JF Electro-Optical Characteristics C E L Parameter Reverse breakdown voltage Reverse Voltage leakage current Forward Voltage J E R T E Symbol C 1.BASE 2.EMITTER 3.COLLECTOR 0.4 1. ANODE-CATHODE ANODE D T ,. L O SOT-23 N O Unit:mm 。 (Ta=25 C) Test Condition MIN. V (BR) I R =100 A 70 IR V R =70V 2.5 I F =1mA 715 I F =10mA 855 I F =50mA 1000 I F =150mA 1250 VF Diode Capacitance CD Reverse Recovery Time t rr V R =0V f=1MHz MAX. Unit V Http:// www.wej.cn mV 1.5 pF 6 nS W WEJ ELECTRONIC CO. A E-mail:[email protected] RoHS BAL99LT1 Typical Characteristics 10 I R ,REVERSE CURRENT ( A) 。 T A =150 C 。 T A =125 C 1.0 。 T A =85 C 0.1 。 T A =55 C 0.01 。 0.001 T A =25 C 0 10 20 30 40 50 V R ,REVERSE VOLTAGE(VOLTS) Leakage Current N I F ,FORWARD CURRENT (mA) 100 R T 10 。 T A =85 C 1.0 C E L 0.1 0.2 0.4 IC C D T ,. L O O 。 T A =25 C 。 T A =-40 C 0.6 0.8 1.0 1.2 V F ,FORWARD VOLTAGE(VOLTS) W 0.68 C D ,DIODE CAPACTANCE(pF) J E E Forward Voltage 0.64 0.6 0.56 0.52 0 2 4 6 8 V R ,REVERSE VOLTAGE(VOLTS) Capacitance WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]