RoHS 2SB1261-Z 2SB1261-Z TRANSISTOR (PNP) FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range 3. EMITTER IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO C E L Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage Base-emitter saturation voltage W Switching Time 1 2 3 O Test conditions MIN TYP MAX Ic=-100µA, IE=0 -60 V Ic=-1mA, IB=0 -60 V IE=-100µA, IC=0 -7 V VCB=-60V, IE=0 -10 µA IEBO VEB=-7V, IC=0 -10 µA hFE(1) VCE=-2V, IC=-200mA 60 hFE(2) VCE=-2V, IC=-600mA 100 hFE(3) VCE=-2V, IC=-2A VCE(sat) IC=-1.5A, IB=-150mA -0.3 V VBE(sat) IC=-1.5A, IB=-150mA -1.2 V fT VCE=-5V, IC=-1.5A 120 MHz Cob VCB=-1.0V, IE=0, f=1MHz 30 pF Turn on Time ton Storage Time tstg Fall Time 400 50 0.5 VCC=-10V, IC=-1A, IB1=-IB2=-0.1A 2.0 µs 0.5 tf CLASSIFICATION OF hFE(1) Rank Range M L K 100-200 160-320 200-400 WEJ ELECTRONIC CO. UNIT ICBO Transition frequency Collector output capacitance N C O unless otherwise specified) R T Collector-base breakdown voltage J E D T ,. L TO-252 Http:// www.wej.cn E-mail:[email protected]