RoHS MMBT3904T MMBT3904T SOT-523 TRANSISTOR (NPN) FEATURES Power dissipation D T ,. L 1. BASE 2. EMITTER 0.15 PCM: W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.2 A Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ IC MARKING:1N ELECTRICAL CHARACTERISTICS (Tamb=25℃ Symbol Parameter Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO ICBO Emitter cut-off current IEBO E Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance W otherwise N conditions MIN TYP MAX UNIT Ic=10µA,IE=0 60 V Ic=1mA,IB=0 40 V IE=10µA,IC=0 6 V O VCB=30V,IE=0 0.05 µA VEB=5V,IC=0 0.05 µA VCE=1V,IC=0.1mA 40 hFE(2) VCE=1V,IC=1mA 70 hFE(3) VCE=1V,IC=10mA 100 hFE(4) VCE=1V,IC=50mA 60 hFE(5) VCE=1V,IC=100mA 30 VCE(sat)1 IC=10mA,IB=1mA 0.2 V VCE(sat)2 IC=50mA,IB=5mA 0.3 V VBE(sat)1 IC=10mA,IB=1mA 0.85 V VBE(sat)2 IC=50mA,IB=5mA 0.95 V fT VCE=20V,IC=10mA,f=100MHz Cob VCB=5V,IE=0,f=1MHz VCE=5V,Ic=0.1mA, Noise figure NF Delay time td VCC=3V, VBE=0.5V Rise time tr IC=10mA , IB1=1mA Storage time tS Fall time tf WEJ ELECTRONIC CO. specified) hFE(1) C E L DC current gain Test R T Collector cut-off current J E unless C O f=1MHZ,Rg=1KΩ VCC=3V, IC=10mA IB1= IB2= 1mA Http:// www.wej.cn 0.65 300 300 MHz 4 pF 5 dB 35 nS 35 nS 200 nS 50 nS E-mail:[email protected] RoHS MMBT3904T R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]