RoHS 2SC2655 2SC2655 D T TO-92MOD TRANSISTOR (NPN) FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Base-emitter saturation voltage Transition frequency Collector output capacitance W Switch time conditions MIN TYP MAX UNIT Ic=100µA, IE=0 50 V Ic=10mA, IB=0 50 V IE=100µA, IC=0 5 V ICBO VCB=50V, IE=0 1 µA IEBO VEB=5V, IC=0 1 µA hFE(1) VCE=2V, IC=500mA 70 hFE(2) VCE=2V, IC=1.5A 40 VCE(sat) IC=1A, IB=0.05A 0.5 V VBE(sat) IC=1A, IB=0.05A 1.2 V fT VCE=2V, IC=0.5A 100 MHz Cob VCB=10V, IE=0, f=1MHz 30 pF Tune on Time ton Storage Time tstg Fall Time O Test R T C E L V(BR)CBO N 123 unless otherwise specified) Symbol Collector-base breakdown voltage IC C ,. L O 240 0.1 Vcc=30V, Ic=1A, IB1=-IB2=0.05A 1.0 0.1 tf CLASSIFICATION OF hFE(1) Rank Range WEJ ELECTRONIC CO. O Y 70-140 120-240 Http:// www.wej.cn E-mail:[email protected] µs