RoHS MMBT2222AT MMBT2222AT TRANSISTOR (NPN) SOT-523 D T ,. L 1. BASE 2. EMITTER FEATURES Power dissipation 3. COLLECTOR PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Test IC conditions Collector-base breakdown voltage V(BR)CBO Ic= 10µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Collector cut-off current ICEO R T IEBO Emitter cut-off current hFE(1) MIN MAX UNIT 75 V Ic= 10mA, IB=0 40 V IE=10µA, IC=0 6 V O N VCB=70V, IE=0 0. 1 µA VCE=35V, IB=0 0. 1 µA VEB= 3V, IC=0 0. 1 µA VCE=10V, IC= 0.1mA 35 VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 hFE(5) VCE=10V, IC= 500mA 40 VCE(sat)1 IC=150 mA, IB= 15mA 0.3 V VCE(sat)2 IC=500 mA, IB= 50mA 1 V VBE(sat)1 IC=150 mA, IB=15mA 1.2 V VBE(sat)2 IC=500 mA, IB= 50mA 2 V C E L DC current gain C O unless otherwise specified) hFE(2) Collector-emitter saturation voltage E Base-emitter saturation voltage J E Transition frequency fT Output Capacitance Cob W VCE=20V, IC= 20mA f=100MHz VCB=10V, IE= 0 f=1MHz Delay time td VCC=30V, IC=150mA Rise time tr VBE(off)=0.5V, IB1=15mA Storage time tS VCC=30V, IC=150mA Fall time tf IB1= IB2= 15mA Marking 300 MHz 8 pF 10 nS 25 nS 225 nS 60 nS :1P WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT2222AT R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]