RoHS KTC3199 KTC3199 D T ,. L TO-92S TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current ICM: 150 mA Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range 3. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO C E L Collector cut-off current O Test R T V(BR)CBO N 123 unless otherwise specified) Symbol Collector-base breakdown voltage C O conditions MIN TYP MAX UNIT Ic=100µA, IE=0 50 V Ic=1mA, IB=0 50 V IE=100µA, IC=0 5 V ICBO VCB=50V, IE=0 0.1 µA IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=6V, IC=2mA VCE(sat) IC=100mA, IB=10mA fT VCE=10V, IC=1mA Collector output capacitance Cob VCB=10V, IE=0, f=1MHz Noise figure NF Emitter cut-off current DC current gain E Collector-emitter saturation voltage Transition frequency J E W hFE Linearity 70 700 0.1 0.25 80 VCE=6V, Ic=0.1mA, f=1KHZ, Rg=10KΩ MHz 2.0 3.5 pF 1.0 10 dB 0.95 hFE(0.1mA)/hFE(2mA) CLASSIFICATION OF hFE(1) Rank Range O Y GR BL 70-140 120-240 200-400 300-700 WEJ ELECTRONIC CO. Http:// www.wej.cn V E-mail:[email protected]