RoHS 2SC2223 D T SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation 150 mW (Tamb=25℃) 0. 95¡ À0. 025 PCM: TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current N O Test R T C E L V(BR)CBO IC 2. 80¡ À0. 05 1. 60¡ À0. 05 unless otherwise specified) Symbol Collector-base breakdown voltage C 1. 9 Collector current 20 mA ICM: Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range ,. L O 2. 92¡ À0. 05 TRANSISTOR (NPN) 0. 35 2SC2223 conditions MIN TYP MAX UNIT Ic=100µA, IE=0 30 V Ic=1mA, IB=0 20 V IE=100µA, IC=0 4 V ICBO VCB=25V, IE=0 0.1 µA IEBO VEB=3V, IC=0 0.1 µA hFE(1) VCE=6V, IC=1mA VCE(sat) IC=10mA, IB=1mA VBE VCE=6V, IC=1mA fT VCE=6V, IC=1mA Collector output capacitance Cob VCB=6V, IE=0, f=1MHz Noise figure NF Emitter cut-off current DC current gain Collector-emitter saturation voltage E Base-emitter voltage J E Transition frequency W 40 180 0.3 V 0.72 V 400 VCE=6V, Ic=1mA, f=100MHZ, Rg=50Ω MHz 1 pF 3 dB CLASSIFICATION OF hFE(1) Rank Range F12 F13 F14 40-80 60-120 90-180 Marking WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]