RoHS A773 A733 TRANSISTOR (PNP) D T ,. L TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.25 W (Tamb=25℃) 3. BASE Collector current ICM: -0.1 A Collector-base voltage V (BR) CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter R T V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage O IC N unless otherwise specified) Symbol Collector-base breakdown voltage C O 1 2 3 Test conditions MIN TYP MAX UNIT IC= -50µA , IE=0 -60 V IC= -1mA , IB=0 -50 V V(BR)EBO IE= -50µA, IC=0 -5 V ICBO VCB= -60 V, IE=0 -0.1 µA IEBO VEB= -5 V, IC=0 -0.1 µA hFE VCE= -6 V, IC= -1mA VCE(sat) IC= -100mA, IB=- 10mA VBE VCE=-6V, IC=-1.0mA fT VCE=-6V, IC=-10mA Collector output capacitance Cob VCB=-10V, IE=0, f=1MHZ 4.5 6 pF Noise figure NF VCE=-6V, IC=-0.3mA, Rg=10kΩ, f=100HZ 6 20 dB C E L Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Base-emitter voltage Transition frequency W 90 200 600 -0.18 -0.3 V -0.58 -0.62 -0.68 V 100 180 MHz CLASSIFICATION OF hFE Rank Range R Q P K 90-180 135-270 200-400 300-600 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]