RoHS 2SD874A 2SD874A 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 2 3. EMITTER IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO DC current gain E Collector-emitter saturation voltage Base-emitter saturation voltage C conditions MIN TYP MAX Ic=10µA, IE=0 60 V Ic=2mA, IB=0 50 V IE=10µA, IC=0 5 V VCB=20V, IE=0 0.1 µA IEBO VEB=4V, IC=0 0.1 µA hFE(1) VCE=10V, IC=500mA 85 hFE(2) VCE=5V, IC=1A 50 VCE(sat) IC=500mA, IB=50mA 0.4 V VBE(sat) IC=500mA, IB=50mA 1.2 V fT VCE=10V, IC=50mA, f=200MHz 200 MHz Cob VCB=10V, IE=0, f=1MHz 20 pF Collector output capacitance 340 CLASSIFICATION OF hFE(1) Rank Range Marking Q R S 85-170 120-240 170-340 YQ YR YS WEJ ELECTRONIC CO. UNIT ICBO Transition frequency W O Test R T C E L Emitter cut-off current N O 3 unless otherwise specified) Symbol Collector cut-off current 1 mW (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range J E D T ,. L SOT-89 TRANSISTOR (NPN) Http:// www.wej.cn E-mail:[email protected]