RoHS 2SA836 2SA836 D T ,. L TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25℃) C 2. COLLECTOR Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -55 V Operating and storage junction temperature range 3. BASE TJ, Tstg: -55℃ to +150℃ IC N O 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol O Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -10µA , IE=0 -55 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -55 V Emitter-base breakdown voltage V(BR)EBO IE= -10µA, IC=0 -5 V ICBO VCB=-18V, IE=0 -0.1 µA IEBO VEB= -2V , -0.05 µA C E L Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage Base-emitter voltage J E R T Transition frequency Output capacitance W Noise figure IC=0 hFE VCE=-12 V, IC= -2mA 160 500 VCEsat IC= -10mA, IB= -1mA -0.5 V VBE(ON) VCE=-12 V, IC= -2mA -0.75 V fT VCE=-12 V, IC= -2mA Cob VCE=-10V, IE=0,f=1 MHz NF VCE=-6V, IC=0.1 mA, f=1 0Hz, RG=10KΩ VCE=-6V, IC=0.1 mA, f=1 kHz, RG=10KΩ 150 MHz 4 pF 5 dB 1 CLASSIFICATION OF hFE Rank Range WEJ ELECTRONIC CO. C D 160-320 250-500 Http:// www.wej.cn E-mail:[email protected]