RoHS 2SA1318 2SA1318 D T ,. L TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range 3. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage O N 1 2 3 unless otherwise specified) R T Symbol C O Test conditions MIN TYP MAX UNIT Ic=-10µA, IE=0 -60 V V(BR)CEO Ic=-1mA, IB=0 -50 V V(BR)EBO IE=-10µA, IC=0 -6 V ICBO VCB=-40V, IE=0 -0.1 µA IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-6V, IC=-1mA 100 hFE(2) VCE=-6V, IC=-0.1mA 70 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V fT VCE=-6V, IC=-10mA 200 MHz Cob VCB=-6V, IE=0, f=1MHz 4.5 pF C E L Collector cut-off current Emitter cut-off current DC current gain J E E Transition frequency W Collector output capacitance 560 CLASSIFICATION OF hFE(1) Rank Range R S T U 100-200 140-280 200-400 280-560 Marking WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]