DATA SHEET MUR120 ~ MUR160 SEMICONDUCTOR designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: FEATURES • Ultra fast 50 and 75 Nano second Recovery Times DO-41 • 175°C Operating Junction Temperature Unit:inch(mm) • Low Forward Voltage • Low Leakage Cu rrent • High Temperature Glass Passivated Junction • Reverse Voltage to 6 00 Volts .107 (2.7) .080 (2.0) DIA. • High temperature soldering : 260 O C / 10 seconds at terminals • 1.0 (25.4) MIN. Pb free product a t available : 9 9% Sn above meet RoHS environment sub stance directive request Mechanical Characteristics: .205 (5.2) .160 (4.1) • Case : Epoxy , Molded • Weight: 0.4 gram (approximately ) • Finish : All External Surfaces Corrosion Resi stant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature fo r Soldering Purposes: 2 20°C 1.0 (25.4) MIN. .034 (.86) .028 (.71) DIA. Max . for 10 Seconds, 1 /16, from case • Shipped in plastic bags, 1000 per bag • Av ailable Tape and Reeled , 5 000 per reel , by adding a “RL’’ su ffix to the part number • Polarity: Cathode Indicated by Polarity Band • Marking : MUR120, MUR140 , MUR160 MAXIMUM RATINGS Rati ng Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage 140 160 200 400 600 Uni t Volts VR Average Rectified Forward Current (Square Wave Mounting Method #3 Per Note 1) MUR 120 IF(AV) 1.0 @ TA = 130°C Amps 1.0 @ TA = 120°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, IFSM 30 Amps TJ, Tstg -55 to +150 °C RqJA See Note 1 °C/W single phase, 60 Hz) Operating Junction Temperature and Storage Temperature THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) (iF = 1.0 Amp, TJ = 150°C) vF (iF = 1.0 Amp, TJ = 25°C) Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TJ = 150°C) iR (Rated dc Voltage, TJ = 25°C) Maximum Reverse Recovery Time (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 A) trr 0.875 0.875 1.00 1.00 1.00 1.30 50 150 150 5 5 5 50 50 50 Volts uA ns (1) Pulse Test: Pulse Width = 300 ms, Duty Cycle 3 2.0%. http://www.yeashin.com 1 REV.02 20110725 MUR120 FIG.2 -- FORWARD DRATING CURVE 1.5 20 M UR130-M UR150 10 AVERAGE FORWARD CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.1 -- TYPICAL FORWARD CHARACTERISTICS 6 4 2 1 0.6 0.4 M UR105-M UR120 M UR160 0.2 0.1 0.06 0.04 T J =25 Pulse W idth=300 µ s 0.02 0.01 0.5 0.7 0.9 1.1 1.3 1.5 1.25 1.0 0.75 0.5 0.25 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(9.5mm)Lead Length 0 25 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 50 75 100 125 150 175 NUMBER OF CYCLES AT 60Hz JUNCTION CAPACITANCE. pF FIG.3 -- TYPICAL JUNCTION CAPACITANCE 100 60 40 20 10 6 4 2 1 TJ =25 f=1.0MHz 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS http://www.yeashin.com 2 REV.02 20110725 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 40 20 TA=150 °C 10 4 2 TA=100 °C 1 .4 .2 .1 TA=25 °C .04 .02 .01 20 40 60 80 FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES 100 MICRO AMPERES INSTANTANEOUS REVERSE LEAKAGE CURRENT MUR140 ,160 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, % 60 50 8.3ms Single Half Sine-Wave 40 30 20 10 0 1 2 4 10 20 40 100 NUMBER OF CYCLES AT 60Hz FIG.6 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. (+) 25VDC (approx) (-) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE2) 0 -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . http://www.yeashin.com 3 SET TIME BASE FOR 10/20 ns/cm REV.02 20110725