YEASHIN U202G

DATA SHEET
UF200G~UF2010G
SEMICONDUCTOR
ULT RAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
DO-15
Unit:inch(mm)
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
• Void-free Plastic in DO-15 package
• 2.0 ampere operation at TA=55 OC•with no thermal runaway
• Exceeds environmental standards of MIL-S-19500/228
.140 (3.6)
.104 (2.6)
DIA.
• Ultra fast switching for high efficiency
• High temperature soldering : 260 C / 10 seconds at terminals
O
1.0 (25.4)
MIN.
• Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.300 (7.6)
.230 (5.8)
MECHANICAL DATA
• Case: Glass passivation, DO-15
• Terminals: Axial leads, solderable per MIL-STD-202,
Method 208
1.0 (25.4)
MIN.
.034 (.86)
.028 (.71)
DIA.
• Polarity: Band denotes cathode
• Mounting Position: Any
• Weight: 0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 OC J ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
Peak Reverse Volt age, Pepetitive ; VRM
Maximum RMS Voltage
DC Bl ocking Voltage; VR
Average Forward Current, Io @TA=55°C 3. 8”
lead l ength, 60Hz, resistive or inductive load
SYMBOL
U200G
U201G
U202G
U204G
U206G
U208G
U2010G
UNITS
vRRM
vRMS
vDC
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
50
100
200
400
600
800
1000
V
I (AV)
2.0
A
I FSM
60
A
Peak Forward Surge Current IFM (surge)
8.3msec . single half sine- wave superimposed
on rated load(JEDEC method)
Maximum Forward Voltage VF @2.0A, 25 °C
1.00
VF
1.3
Maxi mum Reverse Current, @ Rated TA=25 °C
Reverse Voltage TA =100 °C
Typi cal Junction capaci tance (Note 1) CJ
Typi cal Junction Resistance (Note 2) R JA
IR
Operati ng and Storage Temperature Range
1.7
V
5
µA
100
µA
CJ
35
pF
RθJL
45
°C/W
Reverse Recovery Time
IF =.5A, IR =1A, Irr=.25A
1.5
50
TRR
TSTG
75
-55 to +150
ns
°C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted
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1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF200G~UF2010G
trr
+0.5A
0
-0.25
-1.0
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
1cm
SET TIME
BASE FOR
50 ns/cm
Source Impedance = 50 Ohms
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
10
UF200G
TYPICAL
IFM, Apk
1
UF208G
TJ = 25 °C
0.1
0.01
0
.2
.4
.6
.8
1.0 1.2
1.4
2.4
SINGLE PHASE
HALF WAVE 60Hz
RESISSTIVE OR
INDUCTIVE
LOAD .375" 9.5mm
LEAD LENGTHS
2.0
1.4
1.2
0.8
0.4
0
1.6
25
50
75
100
125
150
175
AMBIENT TEMPERATURE, °C
Fig. 2-FORWARD CHARACTERISTICS
Fig. 3-FORWARD CURRENT DERATING CURVE
PEAD FORWARD SURGE CURRENT,
AMPERES
FORWARD VOLTAGE-VFM(Vpk)
JUNCTION CAPACITANCE, pF
100
TJ = 25 °C
f = 1.0MHz
Vsig = 50Mvp-p
10
5
1
10
10
0
REVERSE VOLTAGE, VOLTS
60
48
36
24
12
0
1
2
4
6 8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
Fig. 4-TYPICAL JUNCTION CAPACITANCE
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Fig. 5-PEAK FORWARD SURGE CURRENT
2
REV.02 20110725