ACE8628B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE8628B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features VDS 20V ID=8A (VGS=4.5V) RDS(ON)<14mΩ (VGS=4.5V) RDS(ON)<15mΩ (VGS=4V) RDS(ON)<17.5mΩ (VGS=3.1V) RDS(ON)<21mΩ (VGS=2.5V) ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage VDSS 20 V VGSS ±12 V O Drain Current (Continuous) * AC TA=25 C O TA=70 C Drain Current (Pulse) * B ID IDM O Power Dissipation TA=25 C O TA=70 C PD 8 6.4 30 2.5 1.6 Operating and Storage Junction Temperature Range TJ/TSTG -55/150 A A W O C Packaging Type DFN3*3-8L VER 1.2 1 ACE8628B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE8628B XX + H Halogen - free Pb - free NN : DFN3*3-8L Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Leakage Current V(BR)DSS VGS=0V, ID=250 uA IGSS VDS=0V,VGS=±12V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA Drain-Source On-Resistance RDS(ON) 20 V 2.5 10 uA 1 uA 0.51 1 V VGS=4.5V, ID=5A 12.1 14 VGS=4V, ID=5A 12.6 15 VGS=3.1V, ID=5A 13.5 17.5 VGS=2.5V, ID=2.5A 14.6 21 0.4 Forward Transconductance gFS VDS=5V, ID=8A 36 Diode Forward Voltage Maximum Body-Dode Continuous Current VSD ISD=1A, VGS=0V 0.63 IS mΩ S 1 V 2.4 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 5.6 td(on) 6.2 12.4 12.7 25.4 51.7 103.4 16 32 Turn-On Time Turn-Off Time tr td(off) 17.9 VGS=4.5V, VDS=10V, ID=8A VGS=5V, RL=1.5Ω, VDS=10V, RGEN=3Ω tf 4.1 nC nS Dynamic Input Capacitance Ciss Output Capacitance REVERSE Transfer Capacitance Coss Crss 1810 VGS=0V, VDS=10V, f=1MHz 232 pF 200 VER 1.2 2 ACE8628B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B. Repetitive rating, pulse width limited by junction temperature. C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient . D. The static characteristics are obtained using <300 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Typical Performance Characteristics VER 1.2 3 ACE8628B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics VER 1.2 4 ACE8628B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics VER 1.2 5 ACE8628B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Packing Information DFN3*3-8L VER 1.2 6 ACE8628B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 7