ACE ACE4614B

ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Description
The ACE4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used in inverter and other applications.
Features
N-channel
 VDS=30V
 ID=9A
 RDS(ON)<14mΩ(VGS=10V)
 RDS(ON)<22mΩ(VGS=4.5V)
P-channel
 VDS=-30V
 ID=-8A
 RDS(ON)<20mΩ(VGS=-10V)
 RDS(ON)<35mΩ(VGS=-4.5V)
Absolute Maximum Ratings
Parameter
Symbol N-channel P-channel Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS
30
-30
V
VGSS
±20
±20
V
9
-8
7.2
-6.4
40
-40
2
2
1.3
1.3
O
Drain Current (Continuous) * AC
TA=25 C
O
TA=70 C
Drain Current (Pulse) * B
ID
IDM
O
Power Dissipation
TA=25 C
O
TA=70 C
PD
Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150
A
W
O
C
Packaging Type
SOP-8
VER 1.2
1
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Ordering information
ACE4614B XX + H
Halogen - free
Pb - free
FM : SOP-8
N-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250uA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
uA
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
100
nA
Static Drain-Source On-Resistance
RDS(ON)
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
Forward Transconductance
gFS
VDS=5V, ID=10A
20
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
ISD=1A, VGS=0V
0.74
VGS=10V, ID=10A
12
14
VGS=4.5V, ID=10A
16.5
22
2
3
1.4
IS
mΩ
V
S
1.0
V
2.6
A
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Td(on)
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=15V, ID=10A
VGS=5V
VDS=15V,RGEN=6Ω,
VGS=10V
RL=15Ω
7.65
9.95
2.82
3.67
2.49
3.24
13.92
27.84
2.64
5.28
31.4
62.8
3.28
6.56
nC
ns
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=15V, VGS=0V
f=1MHz
886.01
151
pF
75.77
Note.
1.
The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2.
Repetitive rating, pulse width limited by junction temperature.
3.
The current rating is based on the t≤10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
P-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V, VGS=0V
-1
uA
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
100
nA
Static Drain-Source On-Resistance
RDS(ON)
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
Forward Transconductance
gFS
VDS=-5V, ID=-8A
21.7
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
ISD=-1A, VGS=0V
-0.74
VGS=-10V, ID=-9.7A
17.1
20
VGS=-4.5V, ID=-7A
20.7
35
-1.2
-2
-1
IS
mΩ
V
S
-1.0
V
-2.1
A
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Td(on)
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=-15V, ID=-8A
VGS=-10V
VDS=-15V,RGEN=6Ω,
VGS=-10V
RL=15Ω
33.82
43.97
4.93
6.41
5.2
6.76
15.44
30.88
5.04
10.08
71.04
142.08
16.8
33.6
1973
2200
nC
ns
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-15V, VGS=0V
f=1MHz
491
231
pF
325
Note.
4.
The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
5.
Repetitive rating, pulse width limited by junction temperature.
6.
The current rating is based on the t≤10s junction to ambient thermal resistance rating.
VER 1.2
5
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
6
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
7
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Packing Information
SOP-8
Units: mm
VER 1.2
8
ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
9