ACE634 20V Complementary Enhancement Mode Field Effect Transistor Description The ACE634 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features N-Channel VDS(V)=20V ID=4A RDS(ON) <35mΩ (VGS=4.5V) <42mΩ (VGS=2.5V) P-Channel VDS(V)=-20V ID=-2.5A RDS(ON) <85mΩ (VGS=-4.5V) <115mΩ (VGS=-2.5V) Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±12 ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ *AC TA=70℃ ID 4 -2.5 3.2 -2 Drain Current (pulse) * B IDM 13 -13 1.1 1.1 0.7 0.7 Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range PD TJ TSTG N-Channel P-Channel Unit A A W -55 to 150 O C -55 to 150 O C VER 1.2 1 ACE634 20V Complementary Enhancement Mode Field Effect Transistor Packaging Type SOT-23-6 Ordering information ACE634 XX + H Halogen - free Pb - free GM : SOT-23-6 Electrical Characteristics (N-Channel) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. VGS=0V, ID=250uA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage Drain-Source On Resistance V(BR)DSS RDS(ON) V VGS=4.5V, ID=3.5A 29 35 VGS=2.5V, ID=2.5A 35 42 VGS=1.8V, ID=2A 62 75 0.75 1 V 0.6 mΩ Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA Gate Leakage Current IGSS VDS=0V, VGS=±12V 100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Forward Transconductance gFS VDS=5V, ID=3A 16 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=1.7A, VGS=0V 0.74 IS S 1.0 V 1.7 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V, VGS=4.5V, ID=4A 6.3 8.1 1.7 2.2 1.4 1.8 VER 1.2 nC 2 ACE634 20V Complementary Enhancement Mode Field Effect Transistor Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn- Off Rise Time tf VGS=4.5V, VDS=10V, ID=1A, RG=6Ω 10.4 20.8 4.4 8.8 27.4 54.8 4.2 8.4 ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer capacitance Crss VGS=0V, VDS=8V, f=1MHZ 522.3 98.5 pF 74.7 Note: A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Typical Characteristics (N-Channel) VER 1.2 3 ACE634 20V Complementary Enhancement Mode Field Effect Transistor VER 1.2 4 ACE634 20V Complementary Enhancement Mode Field Effect Transistor Electrical Characteristics (P-Channel) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Drain-Source On Resistance V(BR)DSS RDS(ON) VGS=0V, ID=250uA -20 V VGS=-4.5V, ID=-2.8A 77 85 VGS=-2.5V, ID=-2A 92 115 VGS=-1.8V, ID=-2A 118 200 -0.6 -1 V -0.5 mΩ Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA Gate Leakage Current Zero Gate Voltage Drain Current Forward Transconductance IGSS VDS=0V, VGS=±12V ±100 nA IDSS VDS=-20V, VGS=0V -1 uA gFS VDS=-5V, ID =-2.5V 13 Diode Forward Voltage VSD ISD=-1.6A, VGS=0V -0.81 Maximum Body-Diode Continuous Current Is S -1.0 V -1.6 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn- Off Rise Time tf VDS=-6V, VGS=-4.5V, ID=-2.8A VDD=-6V, RG=6Ω, RL=6Ω, VGEN=-4.5V, ID=-1A, 6.6 8.6 0.3 0.4 1.3 1.7 9.7 19.4 3.6 7.1 33.3 66.6 4.5 9 nC ns Dynamic Input Capacitance Ciss VGS=0V, VDS=-6V, f=1MHZ 589 pF VER 1.2 5 ACE634 20V Complementary Enhancement Mode Field Effect Transistor Output Capacitance Coss 91.2 Reverse Transfer capacitance Crss 67.2 Note: A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Typical Characteristics (P-Channel) VER 1.2 6 ACE634 20V Complementary Enhancement Mode Field Effect Transistor VER 1.2 7 ACE634 20V Complementary Enhancement Mode Field Effect Transistor Packing Information SOT-23-6 VER 1.2 8 ACE634 20V Complementary Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 9