AO4286 100V N-Channel MOSFET General Description Product Summary The AO4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 4A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 68mΩ RDS(ON) (at VGS=4.5V) < 92mΩ 100% UIS Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Units V ±20 V 4 ID TC=70°C C Maximum 100 3 IDM A 25 Avalanche Current C IAS 4 A Avalanche energy L=0.1mH C TA=25°C EAS 0.8 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: Nov. 2012 2.5 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.6 RθJA RθJL -55 to 150 Typ 42 70 20 www.aosmd.com °C Max 50 85 30 Units °C/W °C/W °C/W Page 1 of 5 AO4286 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 25 TJ=55°C VGS=10V, ID=4A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=3A ±100 nA 2.25 2.9 V 55.5 68 104 127 72.5 92 mΩ 1 V 3 A A Forward Transconductance VDS=5V, ID=4A 13 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz Units µA 5 gFS Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ mΩ S 390 pF 30 pF 3 pF 7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.8 10 nC Qg(4.5V) Total Gate Charge 2.8 5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=4A VGS=10V, VDS=50V, RL=12.5Ω, RGEN=3Ω 1.1 nC 1.2 nC 6 ns 2.5 ns 18 ns tf Turn-Off Fall Time 2.5 ns trr Body Diode Reverse Recovery Time IF=4A, dI/dt=500A/µs 15 Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs 53 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Nov. 2012 www.aosmd.com Page 2 of 5 AO4286 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 10V 6V VDS=5V 4.5V 20 15 15 10 ID(A) ID (A) 4V 10 3.5V 125°C 5 5 25°C VGS=3V 0 0 0 1 2 3 4 0 5 90 2 3 4 5 6 Normalized On-Resistance 2.4 VGS=4.5V 80 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 70 60 VGS=10V 50 2.2 2 VGS=10V ID=4A 1.8 17 5 2 10 =4.5V 1.6 1.4 VGS ID=3A 1.2 1 0.8 40 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 180 1.0E+01 ID=4A 160 1.0E+00 40 125°C 120 125°C 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 140 100 80 1.0E-02 25°C 1.0E-03 60 1.0E-04 25°C 40 20 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Nov. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4286 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=50V ID=4A 450 Ciss 400 Capacitance (pF) VGS (Volts) 8 6 4 2 350 300 250 200 Coss 150 100 Crss 50 0 0 0 2 4 6 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 200 100.0 10µs10µs RDS(ON) 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 160 Power (W) 10.0 ID (Amps) 100 TJ(Max)=150°C TA=25°C 17 5 2 10 120 80 40 DC 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 0 10 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 RθJA=85°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Nov. 2012 www.aosmd.com Page 4 of 5 AO4286 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Nov. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5